Room temperature current modulation in large area electronic junctions of spin crossover thin films

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

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Large Area Ordering at Room Temperature in Thin Films of Poly(isoprene-block-ferrocenylsilane)s for Nanofabrication

Chemistry of Materials ◽

10.1021/cm047814p ◽

2005 ◽

Vol 17 (6) ◽

pp. 1275-1278 ◽

Cited By ~ 18

Author(s):

Monique Roerdink ◽

Mark A. Hempenius ◽

G. Julius Vancso

Keyword(s):

Thin Films ◽

Room Temperature ◽

Large Area

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Multilayer Sequential Assembly of Thin Films That Display Room-Temperature Spin Crossover with Hysteresis

Angewandte Chemie ◽

10.1002/ange.200601885 ◽

2006 ◽

Vol 118 (35) ◽

pp. 5918-5921 ◽

Cited By ~ 48

Author(s):

Saioa Cobo ◽

Gábor Molnár ◽

José Antonio Real ◽

Azzedine Bousseksou

Keyword(s):

Thin Films ◽

Room Temperature ◽

Spin Crossover ◽

Sequential Assembly

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A Room Temperature Two-Step Electrochemical Process for Large Area Nanocrystalline Ferrite Thin Films Deposition

Journal of Electroceramics ◽

10.1007/s10832-005-1076-y ◽

2005 ◽

Vol 15 (1) ◽

pp. 35-44 ◽

Cited By ~ 9

Author(s):

S. D. Sartale ◽

C. D. Lokhande

Keyword(s):

Thin Films ◽

Room Temperature ◽

Electrochemical Process ◽

Large Area ◽

Ferrite Thin Films ◽

Nanocrystalline Ferrite

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Room temperature control of spin states in a thin film of a photochromic iron(ii) complex

Materials Horizons ◽

10.1039/c7mh01042g ◽

2018 ◽

Vol 5 (3) ◽

pp. 506-513 ◽

Cited By ~ 18

Author(s):

Lorenzo Poggini ◽

Magdalena Milek ◽

Giacomo Londi ◽

Ahmad Naim ◽

Giordano Poneti ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Temperature Control ◽

Room Temperature ◽

Spin Crossover ◽

High Vacuum ◽

Ultra High Vacuum ◽

Spin States ◽

Molecular Spin

Thin films of a molecular spin crossover iron(ii) complex featuring a photochromic diarylethene-based ligand have been grown by sublimation in ultra-high vacuum on Au(111) and investigated by photoelectron spectroscopies.

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Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

RSC Advances ◽

10.1039/d0ra02567d ◽

2020 ◽

Vol 10 (34) ◽

pp. 19936-19942 ◽

Cited By ~ 1

Author(s):

Martino Rimoldi ◽

Raimondo Cecchini ◽

Claudia Wiemer ◽

Alessio Lamperti ◽

Emanuele Longo ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Antimony Telluride ◽

Large Area ◽

Metalorganic Chemical

Highly oriented antimony telluride thin films are prepared by room temperature metalorganic chemical vapor deposition on Si(111).

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Lattice imaging of Pd2Si thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108660 ◽

1978 ◽

Vol 36 (1) ◽

pp. 304-305

Author(s):

T.S. Kuan ◽

K.N. Tu

Keyword(s):

Thin Films ◽

High Performance ◽

Room Temperature ◽

Ohmic Contacts ◽

Structural Information ◽

Electrical Characteristics ◽

Orientation Relationships ◽

Lattice Imaging ◽

Large Area ◽

Si Films

Thin films of near-noble metal silicide such as Pd2Si and PtSi are now being used as rectifying and ohmic contacts in high performance Si devices. These silicides are made by depositing and annealing the metals on Si. The substrate temperature and orientation and the annealing condition can affect the microstructure of the silicide (1) and in turn change the electrical characteristics of the contact.This study attempts to show that detailed structural information about thin Pd2Si films can be obtained from lattice imaging technique. We chose the Pd2Si because it has a hexogonal structure (2) and grows epitaxially on (111) Si with the orientation relationships:(001)Pd2Si // (111)Si and [100]Pd2Si // [110]Si. The epitaxially-grown film will provide a large area or the single crystal Pd2Si for lattice imaging.The Si wafers used were n-type, 10 to 20 Ω-cm, (111) oriented, and HF etched before deposition. The deposition of Pd film of 100Å was carried out by e-beam evaporation at a rate of ∼5Å/sec. in a vacuum of 2x10-7 torr onto room temperature substrates.

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Epitaxial growth and room-temperature ferromagnetism of quasi-2D layered Cr4Te5thin ﬁlm

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ac47c2 ◽

2022 ◽

Author(s):

Jing Wang ◽

Weiyuan Wang ◽

Jiyu Fan ◽

Huan Zheng ◽

Hao Liu ◽

...

Keyword(s):

Thin Films ◽

Single Crystal ◽

Large Scale ◽

Room Temperature ◽

Magnetic Measurements ◽

Room Temperature Ferromagnetism ◽

Magnetic Interactions ◽

Large Area ◽

Easy Magnetization ◽

Mean Field Model

Abstract Large-scale growth of two-dimensional (2D) ferromagnetic thin ﬁlms will provide an ideal platform for studying 2D magnetism and active spintronic devices. However, controllable growth of 2D ferromagnets over large areas faces tremendous challenges. Herein, we report a large-area growth of 2D ferromagnetic single-crystal thin ﬁlms Cr4Te5 on Al2O3 (0001) substrates using pulsed laser deposition. X-ray diﬀraction patterns and atomic force microscopy detection conﬁrm that all thin ﬁlms are high quality epitaxy together with atom-level smooth. Magnetic measurements show the persistence of ferromagnetic ordering state up to above room temperature, with a Curie temperature 320 K, atomic magnetic moment 0.307µB/Cr, and the easy-magnetization axis in ﬁlm plane. Comparing bulk Cr4Te5 single-crystal, the critical exponent β=0.491 indicates that the magnetic interactions of thin ﬁlm obey mean-ﬁeld model rather than 3D Heisenberg model. This work will open a avenue for growing large-scale 2D ferromagnet and developing room temperature 2D magnet-based nanodevices.

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