Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Characterization of Zinc Oxide Thin Films Deposited by rf Magnetron Sputtering on Mylar Substrates

2001 ◽  
Vol 666 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

ABSTRACTAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 µm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

scholarly journals Red luminescence and UV light generation of europium doped zinc oxide thin films for optoelectronic applications

2020 ◽  
Vol 91 (1) ◽  
pp. 10501
Author(s):  
Mohamed El Jouad ◽  
El Mehdi Bouabdalli ◽  
Samira Touhtouh ◽  
Mohammed Addou ◽  
Nadège Ollier ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Structural Properties ◽  
Uv Light ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Nonlinear Susceptibility ◽  
Oxide Thin Films ◽  
Axis Orientation ◽  
Red Luminescence

In the present work, the Europium doped Zinc Oxide (ZnO: Eu) thin films were elaborated using spray pyrolysis technique. We are interested in investigating the structural properties, photoluminescence (PL) and third harmonic generation (THG) of the elaborated films. The structural properties of as-prepared thin films were characterized by X-ray diffraction (XRD). It confirms that all deposited thin films of Europium doped Zinc Oxide are crystallized in the hexagonal wurtzite structure. Both undoped and doped europium thin films show strong preferred c-axis orientation. Photoluminescence (PL) emission from Europium doped Zinc Oxide thin films, under excitation by 266 nm, shows characteristic transitions of Europium (5D0 → 7F0, 5D0 → 7F1, 5D0 → 7F2, etc.). It reveals the good incorporation of Eu3+ ions in the ZnO host. Additionally, the 5D0 → 7F2 is the most intense transition usually observed for Eu3+ embedded in materials of Zinc Oxide lattice. The dependence of third-order nonlinear susceptibility on doping rate was evaluated. The highest nonlinear susceptibility χ 3 is obtained for the 5% Europium doped ZnO sample.

scholarly journals Sensing mechanism of an optimized room temperature optical hydrogen gas sensor made of zinc oxide thin films

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Hydrogen Gas ◽  
Oxide Thin Films ◽  
Sensing Mechanism

Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity

2007 ◽  
Vol 10 (9) ◽  
pp. H267 ◽  
Author(s):  
Wantae Lim ◽  
Yu-Lin Wang ◽  
F. Ren ◽  
D. P. Norton ◽  
I. I. Kravchenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide
Sign in / Sign up

Export Citation Format

Share Document