Pre-coalescence scaling of graphene island sizes

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

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Few-Layer Graphene Island Seeding for Dendrite-Free Li Metal Electrodes

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b09757 ◽

2016 ◽

Vol 8 (40) ◽

pp. 26895-26901 ◽

Cited By ~ 44

Author(s):

Hee-Kook Kang ◽

Sang-Gil Woo ◽

Jae-Hun Kim ◽

Ji-Sang Yu ◽

Seong-Rae Lee ◽

...

Keyword(s):

Metal Electrodes ◽

Layer Graphene ◽

Graphene Island ◽

Few Layer Graphene

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FIELD DESORPTION OF INTERCALATED CAESIUM ATOMS FROM GRAPHENE ON THE (100) IRIDIUM FACE

Physical and Chemical Aspects of the Study of Clusters Nanostructures and Nanomaterials ◽

10.26456/pcascnn/2021.13.018 ◽

2021 ◽

pp. 18-24

Author(s):

Дмитрий Петрович Бернацкий ◽

Виктор Георгиевич Павлов

Keyword(s):

Electric Field ◽

Single Crystal ◽

Graphene Layer ◽

Field Desorption ◽

Emitter Surface ◽

Field Emitter ◽

Field Electron ◽

Graphene Island ◽

The Face ◽

Iridium Single Crystal

С помощью полевой десорбционной микроскопии исследована десорбция атомов цезия с квазисферической науглероженной поверхности монокристалла иридия. Получены полевые электронные и десорбционные изображения поверхности при образовании графена на грани (100) иридия. Полевые электронные изображения поверхности эмиттера до интеркалирования и после интеркалирования графена атомами цезия не изменяются. Электрическое поле стимулирует десорбцию атомов цезия из интеркалированного состояния, вследствие разрыва связей крайних атомов углерода с поверхностью грани (100) иридия. С помощью покадровой регистрации показана возможность наблюдения локализации дефектов графенового слоя на поверхности полевого эмиттера. Показано, что полевая десорбция атомов цезия из интеркалированного состояния начинается с дефектов графена расположенных по периметру островка графена. Обнаружено, что десорбционные центры могут располагаться не только по периметру графенового островка, но и в центральной его части в случае образования неупорядоченного графена. The desorption of caesium atoms from the quasi-spherical carbonized surface of an iridium single crystal was studied using the field desorption microscopy. Field electron and desorption images of the surface during the formation of graphene on the (100) iridium face are obtained. The field electron images of the emitter surface before intercalation and after intercalation of graphene with caesium atoms do not change. The electric field stimulates the desorption of caesium atoms from the intercalated state, due to the breaking of the bonds of the extreme carbon atoms with the surface of the face (100) of iridium. Using frame-by-frame recording, the possibility is shown of observing the localization of graphene layer defects on the surface of the field emitter. It is also shown that the field desorption of caesium atoms from the intercalated state begins with graphene defects located along the perimeter of the graphene island. It is found that desorption centers can be located not only along the perimeter of the graphene island, but also in its central part in the case of the disordered graphene formation.

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Layer-by-layer-stacked graphene/graphene-island supercapacitor

AIP Advances ◽

10.1063/5.0007887 ◽

2020 ◽

Vol 10 (5) ◽

pp. 055202

Author(s):

Dongwook Lee ◽

Jiwon Seo

Keyword(s):

Layer By Layer ◽

Graphene Island

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Detection of CO using a graphene-island-based single-electron transistor

Nanomaterials and Energy ◽

10.1680/jnaen.19.00010 ◽

2019 ◽

Vol 8 (2) ◽

pp. 135-138 ◽

Cited By ~ 1

Author(s):

Shivani Rani ◽

Soumya Jyoti Ray

Keyword(s):

Single Electron ◽

Single Electron Transistor ◽

Graphene Island

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Scanning probe analysis of twisted graphene grown on a graphene/silicon carbide template

Nanotechnology ◽

10.1088/1361-6528/ac473a ◽

2021 ◽

Author(s):

Yao Yao ◽

Ryota Negishi ◽

Daisuke Takajo ◽

Makoto Takamura ◽

Yoshitaka Taniyasu ◽

...

Keyword(s):

Silicon Carbide ◽

Growth Temperature ◽

Chemical Vapor ◽

Epitaxial Graphene ◽

Scanning Tunneling ◽

Atomic Force ◽

Graphene Island ◽

Grown Graphene ◽

Few Layer Graphene ◽

Twisted Graphene

Abstract Overlayer growth of graphene on an epitaxial graphene/silicon carbide (SiC) as a solid template by ethanol chemical vapor deposition is performed over a wide growth temperature range from 900 ºC to 1450 ºC. Structural analysis using atomic force and scanning tunneling microscopies reveal that graphene islands grown at 1300 ºC form hexagonal twisted bilayer graphene as a single crystal. When the growth temperature exceeds 1400 ºC, the grown graphene islands show a circular shape. Moreover, moiré patterns with different periods are observed in a single graphene island. This means that the graphene islands grown at high temperature are composed of several graphene domains with different twist angles. From these results, we conclude that graphene overlayer growth on the epitaxial graphene/SiC solid at 1300 ºC effectively synthesizes the twisted few-layer graphene with a high crystallinity.

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Gated graphene island-enabled tunable charge transfer plasmon terahertz metamodulator

Nanoscale ◽

10.1039/c8nr10151e ◽

2019 ◽

Vol 11 (17) ◽

pp. 8091-8095 ◽

Cited By ~ 57

Author(s):

Arash Ahmadivand ◽

Burak Gerislioglu ◽

Zeinab Ramezani

Keyword(s):

Signal Processing ◽

Charge Transfer ◽

Graphene Island

Graphene-enhanced optoelectronic terahertz (THz) signal processing offers an exquisite potential for tailoring extreme-subwavelength platforms to develop tunable and highly-responsive photonic tools.

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The complementary graphene growth and etching revealed by large-scale kinetic Monte Carlo simulation

npj Computational Materials ◽

10.1038/s41524-020-00489-y ◽

2021 ◽

Vol 7 (1) ◽

Author(s):

Xiao Kong ◽

Jianing Zhuang ◽

Liyan Zhu ◽

Feng Ding

Keyword(s):

Monte Carlo ◽

Large Scale ◽

2D Materials ◽

Kinetic Monte Carlo ◽

Computational Cost ◽

Atomic Scale ◽

Graphene Growth ◽

Graphene Island ◽

Atomic Simulations ◽

Hole Growth

AbstractTo fully understand the kinetics of graphene growth, large-scale atomic simulations of graphene islands evolution up to macro sizes (i.e., graphene islands of a few micrometers or with billions of carbon atoms) during growth and etching is essential, but remains a great challenge. In this paper, we developed a low computational cost large-scale kinetic Monte Carlo (KMC) algorithm, which includes all possible events of carbon attachments and detachments on various edge sites of graphene islands. Such a method allows us to simulate the evolution of graphene islands with sizes up to tens of micrometers during either growth or etching with a single CPU core. With this approach and the carefully fitted parameters, we have reproduced the experimentally observed evolution of graphene islands during both growth or etching on Pt(111) surface, and revealed more atomic details of graphene growth and etching. Based on the atomic simulations, we discovered a complementary relationship of graphene growth and etching—the route of graphene island shape evolution during growth is exactly the same as that of the etching of a hole in graphene and that of graphene island etching is exactly same as that of hole growth. The complementary relation brings us a basic principle to understand the growth and etching of graphene, and other 2D materials from atomic scale to macro size and the KMC algorithm is expected to be further developed into a standard simulation package for investigating the growth mechanism of 2D materials on various substrates.

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