Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Effective Means ◽  
Transport Layer ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Accumulation Layer ◽  
Extract Information

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.

Dianthraceno[a,e]pentalenes: synthesis, crystallographic structures and applications in organic field-effect transistors

2015 ◽  
Vol 51 (3) ◽  
pp. 503-506 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Wenhua Zhang ◽  
Shiqiang Bai ◽  
Kuo-Wei Huang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Dense Packing ◽  
Organic Field Effect Transistors ◽  
High Charge ◽  
Crystallographic Structures ◽  
High Charge Carrier Mobility

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.

Effect of Film Morphology on Charge Transport in C60-based Organic Field Effect Transistors

2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  
Keyword(s):  
Grain Size ◽  
Charge Carrier ◽  
Substrate Temperature ◽  
Charge Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Film Morphology ◽  
Organic Field Effect Transistors

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.

Carrier mobility in organic field-effect transistors

2011 ◽  
Vol 110 (10) ◽  
pp. 104513 ◽  
Author(s):  
Yong Xu ◽  
Mohamed Benwadih ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
Takeo Minari ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors

2008 ◽  
Vol 92 (16) ◽  
pp. 163307 ◽  
Author(s):  
Naoko Kawasaki ◽  
Yohei Ohta ◽  
Yoshihiro Kubozono ◽  
Atsushi Konishi ◽  
Akihiko Fujiwara
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap States ◽  
Organic Field Effect Transistors

Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states

2021 ◽  
Vol 37 (1) ◽  
pp. 015015
Author(s):  
Yogesh Yadav ◽  
Samarendra Pratap Singh
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
Contact Potential Difference ◽  
Dielectric Surface ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
The Impact ◽  
Lower Contact

Abstract The semiconductor/dielectric interface is arguably the most important region in field-effect transistors. This article investigates the performance-enhancing effects of passivation of the dielectric surface by a self-assembled layer (SAM) of silanes on organic field-effect transistors. Apart from conventional figures of merit for the devices, the energetic distribution of the density of the in-gap trap-states (trap-DOS) and the contact resistance are evaluated using numerical methods. The investigation reveals that the surface passivation of the dielectric SiO2 has a dual effect on device operation. Firstly, it establishes quantitatively that the surface passivation leads to a significant reduction in the density of both shallow and deep traps in the organic semiconductor PBTTT-C14. This effect outweighs the impact of the SAM dipoles on the device turn-on. Secondly, the contact resistance gets lowered by a factor of more than 10 due to the improved top-surface morphology of the PBTTT-C14 thin film. The lower contact resistance in devices is corroborated by lower contact potential difference between PBTTT-C14 and gold, measured using scanning kelvin probe microscopy.

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