Carrier mobility in organic field-effect transistors

2011 ◽  
Vol 110 (10) ◽  
pp. 104513 ◽  
Author(s):  
Yong Xu ◽  
Mohamed Benwadih ◽  
Romain Gwoziecki ◽  
Romain Coppard ◽  
Takeo Minari ◽  
...  
2015 ◽  
Vol 51 (3) ◽  
pp. 503-506 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Wenhua Zhang ◽  
Shiqiang Bai ◽  
Kuo-Wei Huang ◽  
...  

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.


2010 ◽  
Vol 1270 ◽  
Author(s):  
Mujeeb Ullah ◽  
Andrey K. Kadashchuk ◽  
Philipp Stadler ◽  
Alexander Kharchenko ◽  
Almantas Pivrikas ◽  
...  

AbstractThe critical factor that limits the efficiencies of organic electronic devices is the low charge carrier mobility which is attributed to disorder in organic films. In this work we study the effects of active film morphology on the charge transport in Organic Field Effect Transistors (OFETs). We fabricated the OFETs using different substrate temperature to grow different morphologies of C60 films by Hot Wall Epitaxy. Atomic Force Microscopy images and XRD results showed increasing grain size with increasing substrate temperature. An increase in field effect mobility was observed for different OFETs with increasing grain size in C60 films. The temperature dependence of charge carrier mobility in these devices followed the empirical relation named as Meyer-Neldel Rule and showed different activation energies for films with different degree of disorder. A shift in characteristic Meyer-Neldel energy was observed with changing C60 morphology which can be considered as an energetic disorder parameter.


2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.


2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  

2019 ◽  
Author(s):  
◽  
Amrit Prasad Laudari

In this research we study the role of ferroelectric dielectrics in organic field-effect transistors (FETs) to understand the mechanism of charge transport in organic semiconductors. The ferroelectric nature of the polymer, poly(vinylidene fluoride) (PVDF)), has been known for over 45 years. However, its role in interfacial transport in organic/polymeric FETs is not that well understood. PVDF and its copolymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE), as a dielectric in organic FETs is a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. By choosing small molecule organic semiconductors -- pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) -- along with a copolymer PVDF-TrFE as the dielectric layer, the FET characteristics are monitored as a function of temperature. Pentacene FETs show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric, while an activated transport is observed with non-ferroelectric dielectrics. We show that this behavior is correlated with the nature of the trap states in TIPS-pentacene. We also developed the method of dipole engineering of the PVDF-TrFE films to enhance the properties of organic FETs. PVDF-TrFE, despite its applications in a vast range of work (including as a gate dielectric in organic FET and sensing applications) poses concerns such as higher conductivity compared to other polymer non-ferroelectric dielectrics. We have come up with new methods of electrical poling the dielectric layer to enhance FET performance as well as reduce gate leakage issues. We demonstrate the effect of polarization rotation in PVDF-TrFE on the performance of small-molecule-based organic FETs. The subthreshold swing and other transistor parameters in organic FETs can be controlled in a reversible fashion by switching the polarization direction in the PVDF-TrFE layer. We further demonstrate a novel method of selective poling of the dielectric layer. By using solution processed TIPS-pentacene as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 105 and hole mobilities of 1 cm2/Vs under ambient conditions with operating voltages well below-4 V. This research opens prospects of achieving low-operating FETs without any expensive patterning techniques.


2017 ◽  
Vol 53 (83) ◽  
pp. 11407-11409 ◽  
Author(s):  
Beibei Fu ◽  
Xueqing Hou ◽  
Cong Wang ◽  
Yu Wang ◽  
Xiaotao Zhang ◽  
...  

The charge carrier mobility of a sumanene derivative was probed using single-crystal field-effect transistors for the first time.


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