About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

2019 ◽  
Vol 114 (22) ◽  
pp. 221602 ◽  
Author(s):  
M. S. Aksenov ◽  
N. A. Valisheva ◽  
I. B. Chistokhin ◽  
D. V. Dmitriev ◽  
A. S. Kozhukhov ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Barrier Inhomogeneities

Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts

2016 ◽  
Vol 55 (12) ◽  
pp. 124101 ◽  
Author(s):  
Lingqin Huang ◽  
Rechard Geiod ◽  
Dejun Wang
Keyword(s):  
Interface States ◽  
Schottky Contacts ◽  
Barrier Inhomogeneities

Barrier inhomogeneities at Schottky contacts

1991 ◽  
Vol 69 (3) ◽  
pp. 1522-1533 ◽  
Author(s):  
Jürgen H. Werner ◽  
Herbert H. Güttler
Keyword(s):  
Schottky Contacts ◽  
Barrier Inhomogeneities

Influence of barrier inhomogeneities on noise at Schottky contacts

1990 ◽  
Vol 56 (12) ◽  
pp. 1113-1115 ◽  
Author(s):  
Herbert H. Güttler ◽  
Jürgen H. Werner
Keyword(s):  
Schottky Contacts ◽  
Barrier Inhomogeneities

Barrier Inhomogeneities at Schottky Contacts: Curved Richardson Plots, Idealities, and Flat Band Barriers

1992 ◽  
Vol 260 ◽  
Author(s):  
Jürgen H. Werner ◽  
Herbert H. Güttler ◽  
Uwe Rau
Keyword(s):  
Strong Influence ◽  
Schottky Contacts ◽  
Flat Band ◽  
Temperature Dependent ◽  
Quantitative Characterization ◽  
Barrier Heights ◽  
Temperature Coefficients ◽  
Barrier Inhomogeneities ◽  
Spatial Inhomogeneities

ABSTRACTEvaluating either curved Richardson plots or temperature-dependent ideality data allows for a quantitative characterization of spatial inhomogeneities at Schottky contacts. Applying the two independent methods to PtSi/Si diodes we obtain a standard deviation around 70mV for the barrier fluctuations. These results agree with those from the comparison of temperature-dependent current and capacitance barriers. We discuss also flat band barrier heights which should be used if one investigates the temperature dependence of fundamental Schottky barrier heights. Their temperature coefficients depend on metallization. For epitaxial NiSi2/Si contacts on (100) oriented Si we find a strong influence of interface crystallography on the temperature coefficients.

Barrier Inhomogeneities Dominating Low-Frequency Excess Noise of Schottky Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
Uwe Rau ◽  
Herbert H. Güttler ◽  
Jürgen H. Werner
Keyword(s):  
Quantitative Description ◽  
Low Frequency ◽  
Schottky Contacts ◽  
Excess Noise ◽  
Noise Power ◽  
Electronic Noise ◽  
Current Transport ◽  
Spatially Inhomogeneous ◽  
Barrier Inhomogeneities ◽  
Interfacial Potential

ABSTRACTWe introduce a new quantitative description for electronic noise at Schottky contacts. The model combines spatially inhomogeneous current transport across the interface with the modulation of the local barrier height due to trapping dynamics of charged states located at or close to the interface. The experimentally observed increase of noise power with decreasing temperature is explained by the inhomogeneity of the interface. Our model fits experimental data obtained from different silicide/silicon Schottky contacts and the detailed analysis of measured noise spectra yields information about the interfacial potential fluctuations.

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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