Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts

2016 ◽  
Vol 55 (12) ◽  
pp. 124101 ◽  
Author(s):  
Lingqin Huang ◽  
Rechard Geiod ◽  
Dejun Wang
Keyword(s):  
Interface States ◽  
Schottky Contacts ◽  
Barrier Inhomogeneities

About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

2019 ◽  
Vol 114 (22) ◽  
pp. 221602 ◽  
Author(s):  
M. S. Aksenov ◽  
N. A. Valisheva ◽  
I. B. Chistokhin ◽  
D. V. Dmitriev ◽  
A. S. Kozhukhov ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Barrier Inhomogeneities

Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts

1987 ◽  
Vol 91 ◽  
Author(s):  
J. Werner ◽  
R. T. Tung ◽  
A. F. J. Levi ◽  
M. Anzlowar
Keyword(s):  
Contact Resistance ◽  
Series Resistance ◽  
Schottky Contact ◽  
Low Frequency ◽  
Interface States ◽  
Extensive Study ◽  
Schottky Contacts ◽  
Imaginary Component ◽  
Minority Carriers

ABSTRACTWe report results of an extensive study examining the usefulness of low frequency capacitance measurements for the characterization of interface states at intimate Schottky contacts. Our measurements on epitaxial as well as on nonepitaxial silicides reveal that the imaginary component of the low frequency ac-admittance is usually inductive. This inductance is caused by minority carriers that are injected by the Schottky contact and modulate the conductivity of the series resistance of the bulk silicon. The frequently reported excess capacitances (instead of inductances) that were ascribed to interface states are only reproducible when we use imperfect back-contacts to the bulk Si that add a contact resistance to the equivalent dc-circuit of the Schottky diode. Excess low frequency capacitances at intimate Schottky contacts are therefore not related to interface states but rather to the contact resistance of the back-contact.

Electrical characterization of two analogous Schottky contacts produced from N-substituted 1,8-naphthalimide

2018 ◽  
Vol 20 (48) ◽  
pp. 30502-30513 ◽  
Author(s):  
Emine Karagöz ◽  
Songül Fiat Varol ◽  
Serkan Sayın ◽  
Ziya Merdan
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Interface States ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs).

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