New spin logic device constructed using asymmetric quantum wells

Scilight ◽  
2019 ◽  
Vol 2019 (16) ◽  
pp. 160002
Author(s):  
Mara Johnson-Groh
Keyword(s):  
Quantum Wells ◽  
Logic Device ◽  
Spin Logic ◽  
Asymmetric Quantum

Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Asymmetric Quantum ◽  
Parabolic Quantum Wells

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1520011 ◽  
Author(s):  
Pial Mirdha ◽  
Murali Lingalugari ◽  
Evan K. Heller ◽  
John A. Chandy ◽  
Faquir C. Jain
Keyword(s):  
Quantum Wells ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Logic Device ◽  
Coupled Quantum Wells ◽  
Conduction Mode

In this paper, we propose a multiplexer design based on use of a twin channel and twin drain spatial wavefunction-switched field-effect transistors (SWSFETs). SWSFET comprises of vertically stacked coupled quantum wells devices, which are the channels, where depending on the gate voltage only one of the channels is in conduction mode. Using SWSFET in multi-channel and single drain configuration operates as a multi-valued logic device. 2:1 and 4:2 multiplexer designs are proposed which are compatible with current CMOS technology and with all SWSFET. Both designs lead to greater than 4X reduction in transistor count. Ngspice simulation of circuits is also presented.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

2017 ◽  
Vol 111 (5) ◽  
pp. 052407 ◽  
Author(s):  
Yue Zhang ◽  
Zhizhong Zhang ◽  
Lezhi Wang ◽  
Jiang Nan ◽  
Zhenyi Zheng ◽  
...  
Keyword(s):  
Logic Device ◽  
Mesoscopic Scale ◽  
Magnetization Switching ◽  
Spin Logic ◽  
All Spin Logic
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