Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks
Keyword(s):
2015 ◽
Vol 30
(6)
◽
pp. 065013
◽
Keyword(s):
2013 ◽
Vol 133
(7)
◽
pp. 1279-1284
Keyword(s):
1998 ◽
Keyword(s):
Keyword(s):
2014 ◽
Vol 778-780
◽
pp. 631-634
◽
Keyword(s):
2017 ◽
Vol 254
(8)
◽
pp. 1600691
◽