Enhancement type InP metal‐insulator‐semiconductor field‐effect transistor with plasma anodic aluminium oxide as the gate insulator

1982 ◽  
Vol 40 (8) ◽  
pp. 712-713 ◽  
Author(s):  
Y. Hirayama ◽  
H. M. Park ◽  
F. Koshiga ◽  
T. Sugano
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Aluminium Oxide ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Anodic Aluminium Oxide ◽  
Effect Transistor

Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshikazu Ohba ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hirotada Taniuchi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Shift ◽  
Effect Transistor

ABSTRACTAnalysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

2001 ◽  
Vol 16 (12) ◽  
pp. 997-1001 ◽  
Author(s):  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Shiou-Ying Cheng ◽  
Kuo-Hui Yu ◽  
Chih-Kai Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Sensor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Effect Transistor

Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

2017 ◽  
Vol 10 (10) ◽  
pp. 106502 ◽  
Author(s):  
Hongyue Wang ◽  
Jinyan Wang ◽  
Jingqian Liu ◽  
Mengjun Li ◽  
Yandong He ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Effect Transistor
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