scholarly journals Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

2021 ◽  
Vol 129 (11) ◽  
pp. 113103
Author(s):  
Ivan Gamov ◽  
Carsten Hartmann ◽  
Thomas Straubinger ◽  
Matthias Bickermann
Keyword(s):  
Optical Absorption ◽  
Aluminum Nitride ◽  
Point Defect ◽  
Charge States

scholarly journals Al-Based Metal Mesh Electrodes for Advanced Touch Screen Panels Using Aluminum Nitride System Optical Absorption Layer

2015 ◽  
Vol E98.C (11) ◽  
pp. 1000-1007
Author(s):  
Mototaka OCHI ◽  
Yoko SHIDA ◽  
Hiroyuki OKUNO ◽  
Hiroshi GOTO ◽  
Toshihiro KUGIMIYA ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Aluminum Nitride ◽  
Touch Screen ◽  
Metal Mesh ◽  
Absorption Layer

scholarly journals Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering

2016 ◽  
Vol 5 (3) ◽  
pp. 158-169 ◽  
Author(s):  
Moritz to Baben ◽  
Marcus Hans ◽  
Daniel Primetzhofer ◽  
Simon Evertz ◽  
Holger Ruess ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Aluminum Nitride ◽  
Point Defect ◽  
Defect Engineering ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Thermal Stability Of

Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals

2008 ◽  
Vol 103 (7) ◽  
pp. 073522 ◽  
Author(s):  
Matthias Bickermann ◽  
Andreas Münch ◽  
Boris M. Epelbaum ◽  
Octavian Filip ◽  
Paul Heimann ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Aluminum Nitride ◽  
Band Gap ◽  
Bulk Crystals

scholarly journals Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
J. Chan ◽  
T. Fu ◽  
N. W. Cheung ◽  
J. Ross ◽  
N. Newman ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Plasma ◽  
Absorption Characteristics

ABSTRACTCrystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

High crystalline aluminum nitride via highly enhanced adatom diffusion driven by point defect complex

2020 ◽  
Vol 505 ◽  
pp. 144615 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Hae-Yong Lee ◽  
Hyun Uk Lee ◽  
Heejin Kim ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Point Defect ◽  
Defect Complex ◽  
Adatom Diffusion
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