Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

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Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization

IEEE Electron Device Letters ◽

10.1109/led.2014.2331999 ◽

2014 ◽

Vol 35 (7) ◽

pp. 804-804

Keyword(s):

Energy Efficiency ◽

Renewable Energy ◽

Wide Bandgap ◽

Energy Utilization ◽

Special Issue ◽

Power Devices ◽

Wide Bandgap Semiconductor

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Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

Journal of Materials Chemistry C ◽

10.1039/d1tc02852a ◽

2021 ◽

Author(s):

Xiao Tang ◽

Kuanghui Li ◽

Che-Hao Liao ◽

Dongxing Zheng ◽

chen Liu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Gas Sensors ◽

High Power ◽

Wide Bandgap ◽

Semiconductor Material ◽

Uv Detectors ◽

Wide Bandgap Semiconductor ◽

Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

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Wide Bandgap Semiconductor Nanowires for Sensing Applications

ECS Transactions ◽

10.1149/1.2731177 ◽

2019 ◽

Vol 6 (2) ◽

pp. 115-126

Author(s):

Steve Pearton ◽

David Norton ◽

Fan Ren ◽

Li-Chia Tien ◽

Byoung Sam Kang ◽

...

Keyword(s):

Semiconductor Nanowires ◽

Wide Bandgap ◽

Wide Bandgap Semiconductor ◽

Sensing Applications

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Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

2017 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) ◽

10.1109/nssmic.2017.8533073 ◽

2017 ◽

Author(s):

C. Roecker ◽

R. Schirato

Keyword(s):

Semiconductor Detector ◽

Wide Bandgap ◽

X Ray ◽

Wide Bandgap Semiconductor

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Advances in wide-bandgap-semiconductor-based photocathode devices for low-light-level applications

10.1117/12.459765 ◽

2003 ◽

Cited By ~ 4

Author(s):

Melville P. Ulmer ◽

Bruce W. Wessels ◽

Oswald H. W. Siegmund

Keyword(s):

Light Level ◽

Wide Bandgap ◽

Low Light ◽

Wide Bandgap Semiconductor

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Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.459 ◽

2010 ◽

Vol 645-648 ◽

pp. 459-462 ◽

Cited By ~ 1

Author(s):

Oliver Erlenbach ◽

Gonzalo Gálvez ◽

Jorge Andres Guerra ◽

Francisco De Zela ◽

Roland Weingärtner ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Emission Intensity ◽

Thermal Activation ◽

Wide Bandgap ◽

Isochronal Annealing ◽

Strong Increase ◽

Wide Bandgap Semiconductor ◽

Semiconductor Thin Films

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

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