Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

MRS Proceedings ◽

10.1557/proc-106-77 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 3

Author(s):

Mark S. Rodder ◽

Dimitri A. Antoniadis

Keyword(s):

Numerical Calculation ◽

Polycrystalline Silicon ◽

Amorphous Region ◽

Defect States ◽

Temperature Dependent ◽

Step Process ◽

Dependent Potential ◽

Si Films ◽

Polycrystalline Silicon Films ◽

P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

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Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

MRS Proceedings ◽

10.1557/proc-607-321 ◽

1999 ◽

Vol 607 ◽

Author(s):

S. Kato ◽

T. Horikoshi ◽

T. Ohkubo ◽

T. Iida ◽

Y. Takano

Keyword(s):

Silicon Germanium ◽

Bulk Crystals ◽

Temperature Dependent ◽

Alloy Scattering ◽

Self Diffusion ◽

Pn Junction ◽

Current Voltage ◽

Vertical Bridgman ◽

Current Voltage Characteristics ◽

P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

MRS Proceedings ◽

10.1557/opl.2015.546 ◽

2015 ◽

Vol 1770 ◽

pp. 25-30 ◽

Cited By ~ 3

Author(s):

V.C. Lopes ◽

A.J. Syllaios ◽

D. Whitfield ◽

K. Shrestha ◽

C.L. Littler

Keyword(s):

Electrical Conductivity ◽

Amorphous Silicon ◽

Chemical Vapor ◽

Variable Range Hopping ◽

Temperature Dependent ◽

Noise Component ◽

Variable Range ◽

Noise Measurements ◽

P Type ◽

Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

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