scholarly journals Utilizing laser scribing for graphene ablation

AIP Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 105305
Author(s):  
Rangsan Panyathip ◽  
Supab Choopun ◽  
Pisith Singjai ◽  
Sumet Sakulsermsuk
Keyword(s):  
2021 ◽  
Vol 7 (2) ◽  
pp. 48
Author(s):  
Vittorio Scardaci ◽  
Giuseppe Compagnini

Laser scribing has been proposed as a fast and easy tool to reduce graphene oxide (GO) for a wide range of applications. Here, we investigate laser reduction of GO under a range of processing and material parameters, such as laser scan speed, number of laser passes, and material coverage. We use Raman spectroscopy for the characterization of the obtained materials. We demonstrate that laser scan speed is the most influential parameter, as a slower scan speed yields poor GO reduction. The number of laser passes is influential where the material coverage is higher, producing a significant improvement of GO reduction on a second pass. Material coverage is the least influential parameter, as it affects GO reduction only under restricted conditions.


Author(s):  
D. N. Redka ◽  
V.A. Parfenov ◽  
V.P. Afanasjev ◽  
A.V. Kukin ◽  
F. S. Egorov ◽  
...  

Author(s):  
Weinan Liu ◽  
Guojun Zhang ◽  
Yu Huang ◽  
Wenyuan Li ◽  
Youmin Rong ◽  
...  

2000 ◽  
Vol 123 (1) ◽  
pp. 171-177 ◽  
Author(s):  
Michael F. Modest ◽  
Thomas M. Mallison

Lsaers are emerging as a valuable tool for shaping and cutting hard and brittle ceramics. Unfortunately, the large, concentrated heat flux rates that allow the laser to efficiently cut and shape the ceramic also result in large localized thermal stresses in a small heat-affected zone. These notable thermal stresses can lead to micro-cracks, a decrease in strength and fatigue life, and possibly catastrophic failure. In order to assess where, when, and what stresses occur during laser scribing, an elastic stress model has been incorporated into a three-dimensional scribing and cutting code. First, the code predicts the temporal temperature fields and the receding surface of the ceramic. Then, using the scribed geometry and temperature field, the elastic stress fields are calculated as they develop and decay during the laser scribing process. The analysis allows the prediction of stresses during continuous wave and pulsed laser operation, a variety of cutting speeds and directions, and various shapes and types of ceramic material. The results of the analysis show substantial tensile stresses develop over a thick layer below and parallel to the surface, which may be the cause of experimentally observed subsurface cracks.


2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.


2016 ◽  
Vol 858 ◽  
pp. 1198-1201
Author(s):  
Alexander Usikov ◽  
Sergey Kurin ◽  
Iosif Barash ◽  
Alexander D. Roenkov ◽  
Andrei Antipov ◽  
...  

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.


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