Temperature-controlled Deposition of Copper(I) Oxide and Metallic Copper Nanostructures from Single-source Molecular Precursor

2014 ◽  
Vol 67 (5) ◽  
pp. 757 ◽  
Author(s):  
Muhammad Shahid ◽  
Muhammad Mazhar ◽  
Asif Ali Tahir ◽  
Muhammad Khawar Rauf ◽  
James Raftery
Keyword(s):  
Thin Films ◽  
Metallic Copper ◽  
Chemical Vapour ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Simple Method ◽  
X Ray ◽  
X Ray Crystallography ◽  
Glass Substrates ◽  
Controlled Deposition

A simple method of depositing morphology- and phase-tailored thin films of copper(i) oxide and metallic copper from [Cu(dmae)(TFA)]4·CH2Cl2 (1), where dmae is N,N-dimethylaminoethanolato and TFA is trifluoroacetato, on glass substrates by aerosol-assisted chemical vapour deposition is demonstrated. The tetrameric precursor 1 was synthesized and its structure was determined by single-crystal X-ray crystallography. Precursor 1 was applied for the deposition of nanostructured thin films of copper(i) oxide and copper nanowires at 250 and 375°C respectively. The deposited thin films were characterized by powder X-ray diffraction, field emission scanning electron microscopy, energy-dispersive X-ray diffraction, and ultraviolet–visible spectroscopy. The results indicate that the phase and morphology of the deposited material are strongly dependent on deposition temperature. UV-vis studies reveal that copper(i) oxide films with a band gap of 2.48 eV may find possible applications in tandem photoelectrochemical devices as light-absorbing material.

Influence of Copper Concentration on the Structural and Optical Properties of Chemically Deposited CuSbS2 Thin Films

2016 ◽  
Vol 19 (1) ◽  
pp. 015-019 ◽  
Author(s):  
Jebadurai Joy Jeba Vijila ◽  
Kannusamy Mohanraj ◽  
Sethuramachandran Thanikaikarasan ◽  
Ganesan Sivakumar ◽  
Thaiyan Mahalingam ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Secondary Phase ◽  
Diffraction Field ◽  
Spectroscopic Techniques ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Simple Chemical ◽  
Scanning Electron

Thin films of CuSbS2 have been deposited on ultrasonically cleaned glass substrates using a simple chemical bath deposition technique. Prepared films have been characterized using X-ray diffraction, Field Emission Scanning Electron Microscopy and UV-Vis-NIR spectroscopic techniques, respectively. X-ray diffraction analysis revealed that the prepared films possess polycrystalline in nature with orthorhombic CuSbS2 in addition to secondary phase of monoclinic Cu3SbS3 and cubic Cu12Sb4S13 for different copper concentrations. Field Emission Scanning Electron Spectroscopic analysis showed that the prepared films possess spherical shaped grains with irregular shaped clusters. Optical absorption analysis showed that the prepared films possess band gap value in the range between 1.7 and 2.4 eV.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Growth of Copper Telluride Thin Films using Electrodeposition

2018 ◽  
Vol 21 (1) ◽  
pp. 015-019
Author(s):  
P. Jeyakumar ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
T. Mahalingam ◽  
Luis Ixtlilco
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Cyclic Voltammetric ◽  
Voltammetric Analysis ◽  
Copper Telluride ◽  
X Ray ◽  
Microstructural Parameters ◽  
Glass Substrates ◽  
Deposited Films

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

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