A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Growth and Characterisation Studies of Eu3O4 Thin Films Grown on Si/SiO2 and Graphene

Nanomaterials ◽

10.3390/nano11061598 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1598

Author(s):

Razan O. M. Aboljadayel ◽

Adrian Ionescu ◽

Oliver J. Burton ◽

Gleb Cheglakov ◽

Stephan Hofmann ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

Mixed Valence ◽

Oxide Phase ◽

X Ray Diffraction ◽

X Ray ◽

Sio2 Substrate ◽

Optical Images ◽

The Eu

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly textured crystalline Eu3O4(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO2 substrate. The SQUID measurements show that both films have a Curie temperature of ∼5.5±0.1 K, with a magnetic moment of ∼320 emu/cm3 at 2 K. The mixed valence of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu2+:Eu3+ ratio of 28:72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the microscopic optical images and Raman measurements show that the graphene underlayer remains largely intact after the growth of the Eu3O4 thin films.

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Infrared spectroscopic and X-ray diffraction characterization of iron disulphide thin films prepared by metal-organic chemical vapour deposition

Journal of Materials Science Letters ◽

10.1007/bf00730854 ◽

1992 ◽

Vol 11 (16) ◽

pp. 1131-1133 ◽

Cited By ~ 8

Author(s):

A. Ennaoui ◽

S. Schroetter ◽

S. Fiechter ◽

H. Tributsch

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

X Ray Diffraction ◽

X Ray ◽

Infrared Spectroscopic ◽

Metal Organic

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Optical properties of anatase TiO2 films modified by N ion implantation

Canadian Journal of Physics ◽

10.1139/p11-136 ◽

2012 ◽

Vol 90 (1) ◽

pp. 39-43 ◽

Cited By ~ 2

Author(s):

X. Xiang ◽

D. Chang ◽

Y. Jiang ◽

C.M. Liu ◽

X.T. Zu

Keyword(s):

Thin Films ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

Radio Frequency Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Atomic Force ◽

Light Region ◽

Uv Visible ◽

Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

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Limitations to the use of Sb as a Surfactant During SiGe MBE

MRS Proceedings ◽

10.1557/proc-533-289 ◽

1998 ◽

Vol 533 ◽

Author(s):

Glenn G. Jernigan ◽

Conrad L. Silvestre ◽

Mohammad Fatemi ◽

Mark E. Twigg ◽

Phillip E. Thompson

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Transmission Electron Microscopy ◽

Quantum Well ◽

Photoelectron Spectroscopy ◽

Surface Coverage ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

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Generalized Methodology for Inserting Metal Heteroatoms into the Layered Zeolite Precursor RUB-36 by Interlayer Expansion

Crystals ◽

10.3390/cryst10060530 ◽

2020 ◽

Vol 10 (6) ◽

pp. 530 ◽

Cited By ~ 2

Author(s):

Chaoqun Bian ◽

Xiao Wang ◽

Lan Yu ◽

Fen Zhang ◽

Jie Zhang ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Inductively Coupled Plasma ◽

Catalytic Performance ◽

X Ray Diffraction ◽

Zeolite Sample ◽

X Ray ◽

Inductively Coupled ◽

Temperature Programmed ◽

First Time ◽

N2 Sorption

The incorporation of metal heteroatoms into zeolites is an effective modification strategy for enhancing their catalytic performance. Herein, for the first time we report a generalized methodology for inserting metal heteroatoms (such as Sn, Fe, Zn, and Co) into the layered zeolite precursor RUB-36 via interlayer expansion by using the corresponding metal acetylacetate salt. Through this generalized methodology, Sn-JHP-1, Fe-JHP-1, Zn-JHP-1 and Co-JHP-1 zeolites could be successfully prepared by the reaction of RUB-36 and corresponding metal acetylacetate salt at 180 °C for 24 h in the presence of HCl solution. As a typical example, Sn-JHP-1 and calcined Sn-JHP-1 (Sn-JHP-2) zeolite is well characterized by the X-ray diffraction (XRD), diffuse reflectance ultraviolet-visible (UV-Vis), inductively coupled plasma (ICP), N2 sorption, temperature-programmed-desorption of ammonia (NH3-TPD) and X-ray photoelectron spectroscopy (XPS) techniques, which confirm the expansion of adjacent interlayers and thus the incorporation of isolated Sn sites within the zeolite structure. Notably, the obtained Sn-JHP-2 zeolite sample shows enhanced catalytic performance in the conversion of glucose to levulinic acid (LA) reaction.

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Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers

Thin Solid Films ◽

10.1016/s0040-6090(96)09126-2 ◽

1996 ◽

Vol 290-291 ◽

pp. 376-380 ◽

Cited By ~ 6

Author(s):

S. Santucci ◽

L. Lozzi ◽

M. Passacantando ◽

P. Picozzi ◽

R. Alfonsetti ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

X Ray Diffraction ◽

X Ray ◽

Tin Thin Films

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Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.328-330.1153 ◽

2011 ◽

Vol 328-330 ◽

pp. 1153-1156 ◽

Cited By ~ 1

Author(s):

Kun Zhong ◽

Yan Dong Xia ◽

Ju Hong Miao ◽

Jiang Fu

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Annealing Treatment ◽

X Ray Diffraction ◽

X Ray

Si and Ge ions are implanted into SiO2thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

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