scholarly journals Calculation of the Exchange Constant in 2D Wigner Liquid

1999 ◽  
Vol 52 (5) ◽  
pp. 845
Author(s):  
V. V. Flambaum ◽  
I. V. Ponomarev ◽  
O. P. Sushkov
Keyword(s):  
Magnetic Order ◽  
Recent Observation ◽  
Metallic Phase ◽  
Range Order ◽  
Spin Interaction ◽  
Exchange Constant ◽  
Two Dimensional ◽  
Metal Insulator ◽  
Theoretical Question ◽  
Antiferromagnetic Spin

The recent observation of a two-dimensional (2D) metal–insulator transition in semiconductor devices and the strong influence of a magnetic field on the metallic phase has attracted a great deal of interest. This gives rise to the important theoretical question about the nature and the magnetic order of insulating and conducting phases. In the present paper we calculate (both analytically and numerically) the exchange constant for a two-dimensional Wigner liquid— the state with destroyed long-range order but preserved short-range order. It is demonstrated that there is an antiferromagnetic spin–spin interaction between nearest electrons. We also discuss a possible pairing of the electrons in a 2D Wigner crystal by the spin-Peierls mechanism.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Crystal growth and metal-insulator transition in two-dimensional layered rare-earth palladates

2018 ◽  
Vol 2 (8) ◽  
Author(s):  
Yoshiko Nanao ◽  
Yoshiharu Krockenberger ◽  
Ai Ikeda ◽  
Yoshitaka Taniyasu ◽  
Michio Naito ◽  
...  
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Recovery of long-range order in two-dimensional charge density waves at high temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 952-954
Author(s):  
Suk Hyun Sung ◽  
Yin Min Goh ◽  
Noah Schnitzer ◽  
Ismail El Baggari ◽  
Kai Sun ◽  
...  
Keyword(s):  
Charge Density ◽  
Long Range ◽  
High Temperatures ◽  
Charge Density Waves ◽  
Range Order ◽  
Long Range Order ◽  
Two Dimensional ◽  
Density Waves

scholarly journals Robust anomalous metallic states and vestiges of self-duality in two-dimensional granular In-InOx composites

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Xinyang Zhang ◽  
Bar Hen ◽  
Alexander Palevski ◽  
Aharon Kapitulnik
Keyword(s):  
Magnetic Field ◽  
Metallic Phase ◽  
Broadband Noise ◽  
Two Dimensional ◽  
Conventional Theory ◽  
Logarithmic Divergence ◽  
Self Duality ◽  
Low Field ◽  
Wide Range ◽  
Low Temperature Resistance

AbstractMany experiments investigating magnetic-field tuned superconductor-insulator transition (H-SIT) often exhibit low-temperature resistance saturation, which is interpreted as an anomalous metallic phase emerging from a ‘failed superconductor’, thus challenging conventional theory. Here we study a random granular array of indium islands grown on a gateable layer of indium-oxide. By tuning the intergrain couplings, we reveal a wide range of magnetic fields where resistance saturation is observed, under conditions of careful electromagnetic filtering and within a wide range of linear response. Exposure to external broadband noise or microwave radiation is shown to strengthen the tendency of superconductivity, where at low field a global superconducting phase is restored. Increasing magnetic field unveils an ‘avoided H-SIT’ that exhibits granularity-induced logarithmic divergence of the resistance/conductance above/below that transition, pointing to possible vestiges of the original emergent duality observed in a true H-SIT. We conclude that anomalous metallic phase is intimately associated with inherent inhomogeneities, exhibiting robust behavior at attainable temperatures for strongly granular two-dimensional systems.

scholarly journals Disordered loops in the two-dimensional antiferromagnetic spin–fermion model

2008 ◽  
Vol 795 (3) ◽  
pp. 578-595
Author(s):  
T. Enss ◽  
S. Caprara ◽  
C. Castellani ◽  
C. Di Castro ◽  
M. Grilli
Keyword(s):  
Two Dimensional ◽  
Fermion Model ◽  
Antiferromagnetic Spin

Tight-Binding Model for DNA Double Chains: Metal–Insulator Transition Due to the Formation of a Double Strand of DNA

1997 ◽  
Vol 11 (20) ◽  
pp. 2405-2423 ◽  
Author(s):  
Kazumoto Iguchi
Keyword(s):  
Electronic Structure ◽  
Finite Temperature ◽  
Deoxyribonucleic Acid ◽  
Recent Observation ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Metal Insulator Transition ◽  
Binding Model ◽  
Metal Insulator ◽  
System A

A tight-binding model is formulated for the calculation of the electronic structure of a double strand of deoxyribonucleic acid (DNA). The theory is applied to DNA with a particular structure such as the ladder and decorated ladder structures. It is found that there is a novel type of metal–insulator transitions due to the hopping anisotropy of the system. A metal-semimetal-semiconductor transition is found in the former and an effective semiconductor-metal transition at finite temperature in the latter, as the effect of base paring between two strands of DNA is increased. The latter mechanism may be responsible for explaining the Meade and Kayyem's recent observation.

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