scholarly journals Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides

2016 ◽  
Vol 113 (14) ◽  
pp. 3746-3750 ◽  
Author(s):  
Lu Xie ◽  
Xiaodong Cui

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin–valley locking in monolayer WS2, and electrically detected by a lateral spin–valve structure with ferromagnetic contacts. The demonstrated long spin–valley lifetime, the unique valley-contrasted physics, and the spin–valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Masaki Kondo ◽  
Masayuki Ochi ◽  
Tatsuhiro Kojima ◽  
Ryosuke Kurihara ◽  
Daiki Sekine ◽  
...  

AbstractIn non-centrosymmetric metals, spin-orbit coupling induces momentum-dependent spin polarization at the Fermi surfaces. This is exemplified by the valley-contrasting spin polarization in monolayer transition metal dichalcogenides with in-plane inversion asymmetry. However, the valley configuration of massive Dirac fermions in transition metal dichalcogenides is fixed by the graphene-like structure, which limits the variety of spin-valley coupling. Here, we show that the layered polar metal BaMnX2 (X = Bi, Sb) hosts tunable spin-valley-coupled Dirac fermions, which originate from the distorted X square net with in-plane lattice polarization. We found that BaMnBi2 has approximately one-tenth the lattice distortion of BaMnSb2, from which a different configuration of spin-polarized Dirac valleys is theoretically predicted. This was experimentally observed as a clear difference in the Shubnikov-de Haas oscillation at high fields between the two materials. The chemically tunable spin-valley coupling in BaMnX2 makes it a promising material for various spin-valleytronic devices.


2019 ◽  
Vol 122 (8) ◽  
Author(s):  
Natalia Cortés ◽  
O. Ávalos-Ovando ◽  
L. Rosales ◽  
P. A. Orellana ◽  
S. E. Ulloa

Author(s):  
Ruining Wang ◽  
Chen-Dong Jin ◽  
Hu Zhang ◽  
Ru-Qian Lian ◽  
Xingqiang Shi ◽  
...  

Two-dimensional transition metal dichalcogenides (TMDCs) are promising in spintronics due to their spin-orbit coupling, but the intrinsic non-magnetic properties limit their further developments. Here, we focus on the energy landscapes...


2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei-Ting Hsu ◽  
Yen-Lun Chen ◽  
Chang-Hsiao Chen ◽  
Pang-Shiuan Liu ◽  
Tuo-Hung Hou ◽  
...  

Abstract A robust valley polarization is a key prerequisite for exploiting valley pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer a unique platform to develop such valleytronic devices, the anticipated long-lived valley pseudospin has not been observed yet. Here we demonstrate that robust valley-polarized holes in monolayer WSe2 can be initialized by optical pumping. Using time-resolved Kerr rotation spectroscopy, we observe a long-lived valley polarization for positive trion with a lifetime approaching 1 ns at low temperatures, which is much longer than the trion recombination lifetime (∼10–20 ps). The long-lived valley polarization arises from the transfer of valley pseudospin from photocarriers to resident holes in a specific valley. The optically initialized valley pseudospin of holes remains robust even at room temperature, which opens up the possibility to realize room-temperature valleytronics based on transition metal dichalcogenides.


Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1289-1308 ◽  
Author(s):  
Maciej Koperski ◽  
Maciej R. Molas ◽  
Ashish Arora ◽  
Karol Nogajewski ◽  
Artur O. Slobodeniuk ◽  
...  

AbstractRecent results on the optical properties of monolayer and few layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pumping experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.


2021 ◽  
Vol 2015 (1) ◽  
pp. 012142
Author(s):  
Ivan Sinev ◽  
Mengyao Li ◽  
Fedor Benimetskiy ◽  
Tatiana Ivanova ◽  
Svetlana Kiriushechkina ◽  
...  

Abstract Strong light-matter interactions enable unique nonlinear and quantum phenomena at moderate light intensities. Within the last years, polaritonic metasurfaces emerged as a viable candidate for realization of such regimes. In particular, planar photonic structures integrated with 2D excitonic materials, such as transition metal dichalcogenides (TMD), can support exciton polaritons – half-light half-matter quasiparticles. Here, we explore topological exciton polaritons which are formed in a suitably engineered all-dielectric topological photonic metasurface coupled to TMD monolayers. We experimentally demonstrate the transition of topological charge from photonic to polaritonic bands with the onset of strong coupling regime and confirm the presence of one-way spin-polarized edge topological polaritons. The proposed system constitutes a promising platform for photonic/solid-state interfaces for valleytronics and spintronics.


2019 ◽  
Vol 115 (8) ◽  
pp. 083104
Author(s):  
Peng Chen ◽  
Cai Cheng ◽  
Cheng Shen ◽  
Jing Zhang ◽  
Shuang Wu ◽  
...  

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