Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

2009 ◽  
Vol 615-617 ◽  
pp. 477-480 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Basal Plane ◽  
Defect Formation ◽  
Stacking Faults ◽  
Annealing Process ◽  
Extended Defects ◽  
X Ray ◽  
Substrate Interface ◽  
Aluminum Ions ◽  
Activation Annealing

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

2008 ◽  
Vol 600-603 ◽  
pp. 611-614 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Annealing Process ◽  
Extended Defects ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Activation Annealing ◽  
Shallow Groove

Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

2010 ◽  
Vol 645-648 ◽  
pp. 323-326 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Single Layer ◽  
Annealing Treatment ◽  
Annealing Process ◽  
Extended Defect ◽  
Aluminum Ions ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Nitrogen Phosphorus

Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

2007 ◽  
Vol 556-557 ◽  
pp. 271-274 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano ◽  
L. Storasta ◽  
Toshiyuki Miyanagi
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Driving Force ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Annealing Process ◽  
X Ray ◽  
Mismatch Strain ◽  
Lattice Mismatch Strain ◽  
Koh Etching

Synchrotron reflection X-ray topography and KOH etching were applied to investigate the effects of the ion implantation/annealing process on the existing dislocations in the 4H-SiC epilayers and second epitaxial growth on the ion implanted layer. No systematic generation of dislocations or stacking faults caused by the second epitaxial growth on the implanted layer was observed, while BPDs were confirmed to migrate in the epilayer during the implantation/annealing process. The BPDs bend markedly near the bottom of the implanted layer and tend to lie along the <1-100> (perpendicular to the off-cut direction) after the implantation/annealing process. The lattice mismatch strain created by the implantation is a possible driving force of the glide motion of the BPDs.

Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC

2014 ◽  
Vol 1693 ◽  
Author(s):  
Fangzhen Wu ◽  
Huanhuan Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Stephan G. Mueller ◽  
...  
Keyword(s):  
Direct Observation ◽  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Formation Mechanisms ◽  
Threading Dislocations ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Geometry ◽  
Made In

ABSTRACTIn our previous studies [1-3], four kinds of stacking faults in 4H-SiC bulk crystal have been distinguished based on their contrast behavior differences in synchrotron white beam x-ray topography images. These faults are Shockley faults, Frank faults, Shockley plus c/2 Frank faults, and Shockley plus c/4 Frank faults. Our proposed formation mechanisms for these stacking faults involve the overgrowth of the surface outcrop associated with threading screw dislocations (TSDs) or threading mixed dislocations (TMDs) with Burgers vector of c+a by macrosteps and the consequent deflection of TSDs or TMDs onto the basal plane. Previous synchrotron x-ray topography observations were made in offcut basal wafers using transmission geometry. In this paper, further evidence is reported to confirm the proposed stacking fault formation mechanism. Observations are made in axially cut slices with surface plane {11-20}. Several kinds of stacking faults are recognized and their contrast behavior agrees with the four kinds previously reported. Direct observation is obtained of a Shockley plus c/4 Frank stacking fault nucleating from a TMD deflected onto the basal plane. The contrast from stacking faults on the basal plane in the axial slices is enhanced by recording images after rotating the crystal about the active -1010 reflection vector enabling a broader projection of the basal plane.

Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults

2012 ◽  
Vol 717-720 ◽  
pp. 347-350 ◽  
Author(s):  
Sha Yan Byrapa ◽  
Fang Zhen Wu ◽  
Huan Huan Wang ◽  
Balaji Raghothamachar ◽  
Gloria Choi ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
Basal Plane ◽  
Stacking Faults ◽  
Image Contrast ◽  
Threading Dislocations ◽  
Burgers Vector ◽  
Calculated Phase ◽  
X Ray ◽  
White Beam ◽  
Contrast Studies

A review is presented of Synchrotron White Beam X-ray Topography (SWBXT) studies of stacking faults observed in PVT-Grown 4H-SiC crystals. A detailed analysis of various interesting phenomena were performed and one such observation is the deflection of threading dislocations with Burgers vector c/c+a onto the basal plane and associated stacking faults. Based on the model involving macrostep overgrowth of surface outcrops of threading dislocations, SWBXT image contrast studies of these stacking faults on different reflections and comparison with calculated phase shits for postulated fault vectors, has revealed faults to be of basically four types: (a) Frank faults; (b) Shockley faults; (c) Combined Shockley + Frank faults with fault vector s+c/2; (d) Combined Shockley + Frank faults with fault vector s+c/4.

Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography

1994 ◽  
Vol 375 ◽  
Author(s):  
W. Huang ◽  
S. Wang ◽  
M. Dudley ◽  
P. Neudeck ◽  
J. A. Powell ◽  
...  
Keyword(s):  
Single Crystals ◽  
Basal Plane ◽  
Stacking Faults ◽  
Defect Structures ◽  
Dislocation Generation ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Generation Mechanisms

AbstractDefect structures in Lely SiC single crystals have been studied using synchrotron white beam X-ray topography. Basal plane dislocations and stacking faults probably generated during post-growth cooling are clearly revealed. For both perfect dislocations and partial dislocations bounding the stacking faults, Burgers vectors and line directions are determined from contrast extinction analysis as well as projected direction analysis on different topographic images. The fault planes and fault vectors of the stacking faults were determined using contrast extinction analysis. Possible dislocation generation mechanisms are briefly discussed.

X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 323-326 ◽  
Author(s):  
Ryohei Tanuma ◽  
Daisuke Mori ◽  
Isaho Kamata ◽  
Hidekazu Tsuchida
Keyword(s):  
Basal Plane ◽  
Three Dimensional ◽  
Strain Analysis ◽  
X Ray ◽  
Substrate Interface ◽  
3D Topography ◽  
Interface Strain ◽  
Edge Dislocations ◽  
First Time

This paper demonstrates the X-ray three-dimensional (3D) topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC for the first time. Stereographic topographs are obtained for BPDs and TEDs, showing the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. Strain analysis is also demonstrated for a TED, providing the image of strains in the order of ±10-5. It is verified that the 3D topography is successfully applicable to BPDs and TEDs.

X-ray characterisation of the basal stacking fault densities of (11-22) GaN

CrystEngComm ◽  
2021 ◽  
Author(s):  
Markus Pristovsek ◽  
Martin Fentrup ◽  
Tongtong Zhu ◽  
Gunnar Kusch ◽  
Colin Humphreys
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
X Ray Diffraction ◽  
X Ray

Basal plane stacking faults (BSF) in GaN (11-22) layers were observed by a laboratory X-ray diffraction (XRD) system. For this, the (11-22) GaN was oriented in the [-12-10] zone for...

Photoluminescence study of defects induced by B10H14 ions

2001 ◽  
Vol 669 ◽  
Author(s):  
Noriaki Toyoda ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kazumi Wada ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Ion Implantation ◽  
Defect Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Annealing Process ◽  
Dynamics Simulation ◽  
Line Center ◽  
Photoluminescence Study ◽  
Defect Reactions

ABSTRACTDefect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

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