Correlating chemical and water purity to the surface metal on silicon wafer during wet cleaning process

2002 ◽  
Vol 189 (7) ◽  
pp. 974-984 ◽  
Author(s):  
Drew Sinha
2012 ◽  
Vol 187 ◽  
pp. 163-166 ◽  
Author(s):  
Steven Brems ◽  
Marc Hauptmann ◽  
Elisabeth Camerotto ◽  
Xiu Mei Xu ◽  
Stefan De Gendt ◽  
...  

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.


2012 ◽  
Vol 187 ◽  
pp. 3-5 ◽  
Author(s):  
Marc M. Heyns

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.


2015 ◽  
Vol 1109 ◽  
pp. 262-265
Author(s):  
S. Norhafiezah ◽  
R.M. Ayub ◽  
Mohd Khairuddin Md Arshad ◽  
A.H. Azman ◽  
M.A. Farehanim ◽  
...  

The cleaning process of the silicon wafer becomes one of the most important procedures in semiconductor fabrication. It is acknowledged to remove the contamination on the wafer surface as well as to promote an acceptable surface roughness, prior to performing various deposition methods. The wafer cleaning process which based on hot alkaline and acidic solutions is known as the RCA cleaning. The RCA is still the most important wafer cleaning method used in wafer fabrication industry. In this paper, the effects of various cleaning procedure to the silicon wafer surface roughness are measured using AFM. Subsequently, an optimum cleaning recipe is discussed and proposed.


1993 ◽  
Vol 6 (3) ◽  
pp. 258-267 ◽  
Author(s):  
M. Itano ◽  
F.W. Kern ◽  
M. Miyashita ◽  
T. Ohmi

2020 ◽  
Vol 140 (7) ◽  
pp. 152-157
Author(s):  
Hirofumi Chiba ◽  
Yukio Suzuki ◽  
Yoshiaki Yasuda ◽  
Mitsuyasu Kumagai ◽  
Takaaki Koyama ◽  
...  

2018 ◽  
Author(s):  
Marti Lopez ◽  
Luke Broderick ◽  
John J Carey ◽  
Francesc Vines ◽  
Michael Nolan ◽  
...  

<div>CO2 is one of the main actors in the greenhouse effect and its removal from the atmosphere is becoming an urgent need. Thus, CO2 capture and storage (CCS) and CO2 capture and usage (CCU) technologies are intensively investigated as technologies to decrease the concentration</div><div>of atmospheric CO2. Both CCS and CCU require appropriate materials to adsorb/release and adsorb/activate CO2, respectively. Recently, it has been theoretically and experimentally shown that transition metal carbides (TMC) are able to capture, store, and activate CO2. To further improve the adsorption capacity of these materials, a deep understanding of the atomic level processes involved is essential. In the present work, we theoretically investigate the possible effects of surface metal doping of these TMCs by taking TiC as a textbook case and Cr, Hf, Mo, Nb, Ta, V, W, and Zr as dopants. Using periodic slab models with large</div><div>supercells and state-of-the-art density functional theory based calculations we show that CO2 adsorption is enhanced by doping with metals down a group but worsened along the d series. Adsorption sites, dispersion and coverage appear to play a minor, secondary constant effect. The dopant-induced adsorption enhancement is highly biased by the charge rearrangement at the surface. In all cases, CO2 activation is found but doping can shift the desorption temperature by up to 135 K.</div>


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