The Influence of Wafer Cleaning Process on the Silicon Surface Roughness

2015 ◽  
Vol 1109 ◽  
pp. 262-265
Author(s):  
S. Norhafiezah ◽  
R.M. Ayub ◽  
Mohd Khairuddin Md Arshad ◽  
A.H. Azman ◽  
M.A. Farehanim ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Cleaning Procedure ◽  
Acidic Solutions ◽  
Wafer Cleaning ◽  
Semiconductor Fabrication

The cleaning process of the silicon wafer becomes one of the most important procedures in semiconductor fabrication. It is acknowledged to remove the contamination on the wafer surface as well as to promote an acceptable surface roughness, prior to performing various deposition methods. The wafer cleaning process which based on hot alkaline and acidic solutions is known as the RCA cleaning. The RCA is still the most important wafer cleaning method used in wafer fabrication industry. In this paper, the effects of various cleaning procedure to the silicon wafer surface roughness are measured using AFM. Subsequently, an optimum cleaning recipe is discussed and proposed.

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

Observation in the Surface Roughness of Silicon Wafer during Semi-Fixed Abrasive Machining with Large Grains

2009 ◽  
Vol 69-70 ◽  
pp. 253-257
Author(s):  
Ping Zhao ◽  
Jia Jie Chen ◽  
Fan Yang ◽  
K.F. Tang ◽  
Ju Long Yuan ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Processing Parameters ◽  
Wafer Surface ◽  
Abrasive Machining ◽  
Fixed Abrasive ◽  
Is Failure ◽  
Better Than

Semi-fixed abrasive is a novel abrasive. It has a ‘trap’ effect on the hard large grains that can prevent defect effectively on the surface of the workpiece which is caused by large grains. In this paper, some relevant experiments towards silicon wafers are carried out under the different processing parameters on the semi-fixed abrasive plates, and 180# SiC is used as large grains. The processed workpieces’ surface roughness Rv are measured. The experimental results show that the surface quality of wafer will be worse because of higher load and faster rotating velocity. And it can make a conclusion that the higher proportion of bond of the plate, the weaker of the ‘trap’ effect it has. Furthermore the wet environment is better than dry for the wafer surface in machining. The practice shows that the ‘trap’ effect is failure when the workpiece is machined by abrasive plate which is 4.5wt% proportion of bond in dry lapping.

The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface

1992 ◽  
Vol 259 ◽  
Author(s):  
Y. Ishimaru ◽  
M. Yoshiki ◽  
T. Hatanaka
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Dopant Concentration ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Wafer Surface ◽  
Oxide Growth ◽  
X Ray ◽  
Silicon Bulk ◽  
P Type

ABSTRACTThe effects of dopant type and dopant concentration on the native oxide growth in air on the silicon surface were investigated. The oxide thickness was measured by X-ray photoelectron spectrometry (XPS). The oxide was thicker on n-type Si than on p-type Si in early oxidation. The oxide increased linearly with the dopant concentration. This enhancement of oxidation was assumed to be caused by vacancies near the surface in the silicon bulk.

A New Polishing Pad of EVA-Adhesive-Dressed-with-SiC-Grits Polishing Face and its Applications in Silicon Wafer Polishing

2010 ◽  
Vol 126-128 ◽  
pp. 539-544
Author(s):  
Sung Lin Tsai ◽  
Fuang Yuan Huang ◽  
Biing Hwa Yan ◽  
Yao Ching Tsai
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Ethylene Vinyl Acetate ◽  
Grit Size ◽  
Taguchi Methods ◽  
Absorption Time ◽  
Polishing Pad ◽  
Wheel Turning ◽  
Wafer Polishing

This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), concentration of SiC grit in slurry at 25%, polishing load at 50 gram, turning speed at 10,000 rpm, absorption time of polishing pad at 15 minutes.

SPFM Pre-Cleaning for formation of Silicon Interfaces by Wafer Bonding

1997 ◽  
Vol 477 ◽  
Author(s):  
Stefan Bengtsson ◽  
Karin Ljungberg
Keyword(s):  
Electrical Properties ◽  
Wafer Bonding ◽  
Silicon Surface ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Preparation Procedure ◽  
Cleaning Process ◽  
Spreading Resistance ◽  
Cleaning Procedure

ABSTRACTThe use of H2SO4:H2O2:HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si/Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si/Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique.

A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp Process

2001 ◽  
Vol 671 ◽  
Author(s):  
N. Miyashita ◽  
Shin-ichiro Uekusa ◽  
S. Seta ◽  
T. Nishioka
Keyword(s):  
Surface Roughness ◽  
High Speed ◽  
Crystal Defects ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Force Microscopy ◽  
Cleaning Method ◽  
Atomic Force ◽  
Chemical Impurities ◽  
Large Numbers

ABSTRACTA Trench isolation technology has been developed and applied to high-speed bipolar LSI production. In general, the wafer surface after a conventional ploy-Si Chemical-Mechanical-Polishing (CMP) is contaminated with silica particles and chemical impurities. These contaminations produce some unexpected patterns and crystal defects in the wafer surface layer after oxidation. It is difficult to remove them by the conventional cleaning techniques. Therefore, we have established the new post CMP cleaning method, using the electrolytic ionized water containing chemical additive of a small quantity. The anode water has the cleaning effect for the metallic and organic contaminations, and the cathode water has the removing effect for the particles and the etching effect for the poly-Si surface. For this new cleaning process, it is important to avoid the chemical mechanical damages on the surface and to control the surface roughness. Our experimental work has been focused on the large numbers of the remaining particle and the surface roughness using a particle counter and an atomic force microscopy (AFM). We herein report the properties of the electrolytic ionized water and the examined results of poly-Si surface after CMP process. It was found that the electrolytic ionized water is effective for surface control, and the new cleaning process is useful for CMP process.

Femtosecond Laser-Induced Silicon Surface Morphology in Water

2008 ◽  
Author(s):  
Yukun Han ◽  
Cheng-Hsiang Lin ◽  
Hai-Lung Tsai
Keyword(s):  
Femtosecond Laser ◽  
Surface Morphology ◽  
Surface Quality ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Periodic Structures ◽  
Industrial Applications ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
Laser Parameter

This article investigates the use of femtosecond laser induced surface morphology on silicon wafer surface in water confinement. Unlike irradiation of silicon surfaces in the air, there are no laser induced periodic structures, but irregular roughness is formed when the silicon wafer is ablated under water. The unique discovery of a smoothly processed silicon surface in water confinement under certain laser parameter combinations may help improve laser direct micromachining surface quality in industrial applications.

Novel Cleaning Method of SiC Wafer with Transition Metal Complex

2012 ◽  
Vol 717-720 ◽  
pp. 877-880
Author(s):  
Maiko Kubo ◽  
Makoto Hidaka ◽  
Motohiro Kageyama ◽  
Tomomichi Okano ◽  
Hisayoshi Kobayashi
Keyword(s):  
Transition Metal ◽  
Metal Complex ◽  
Transition Metal Complex ◽  
Pure Water ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Cleaning Method ◽  
Wafer Cleaning ◽  
Atomic Force ◽  
Sic Wafer

In this article, we report a new cleaning method for silicon carbide (SiC) wafers. We found that the dipping treatment in hydrogen fluoride (HF) solution damages the SiC in the “RCA cleaning process”, so we have designed a new cleaning method that does not use HF and reduced the cleaning process to three steps. The characteristic factor of this new method is using a transition metal complex. Generally, no metals have been used for wafer cleaning, but we deliberately used metal and found it could clean the wafer surface very well. After cleaning, the atomic force microscope (AFM) and “Candela” images showed that the particles on most parts of the SiC surface had been removed and the contact angle for ultra-pure water became very low.

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