Anisotropy and surface morphology of polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene thin layer irradiated with ion beam

2022 ◽  
pp. 1-10
Dong Hyun Kim ◽  
Eun-Mi Kim ◽  
Gi-Seok Heo ◽  
Dong Wook Lee ◽  
Jin Young Oh ◽  
2019 ◽  
Vol 297 ◽  
pp. 100-110 ◽  
Nick Lucas ◽  
Kelsey E. Seyfang ◽  
Andrew Plummer ◽  
Michael Cook ◽  
K. Paul Kirkbride ◽  

2021 ◽  
pp. 1-10
Dong Wook Lee ◽  
Eun Mi Kim ◽  
Gi Seok Heo ◽  
Ju Hwan Lee ◽  
Dong Hyun Kim ◽  

2002 ◽  
Vol 20 (6) ◽  
pp. 2072
Meiyong Liao ◽  
Chunlin Chai ◽  
Shaoyan Yang ◽  
Zhikai Liu ◽  
Fuguang Qin ◽  

1995 ◽  
Vol 388 ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

1999 ◽  
Vol 585 ◽  
Douglas H. Lowndes ◽  
Vladimir I. Merkulov ◽  
L. R. Baylor ◽  
G. E. Jellison ◽  
D. B. Poker ◽  

AbstractThe principal interests in this work are energetic-beam control of carbon-film properties and the roles of doping and surface morphology in field emission. Carbon films with variable sp3-bonding fraction were deposited on n-type Si substrates by ArF (193 nm) pulsed-laser ablation (PLA) of a pyrolytic graphite target, and by direct metal ion beam deposition (DMIBD) using a primary Cs+ beam to generate the secondary C- deposition beam. The PLA films are undoped while the DMIBD films are doped with Cs. The kinetic energy (KE) of the incident C atoms/ions was controlled and varied over the range from ∼25 eV to ∼175 eV. Earlier studies have shown that C films' sp3-bonding fraction and diamond-like properties can be maximized by using KE values near 90 eV. The films' surface morphology, sp3–bonding fraction, and Cs-content were determined as a function of KE using atomic force microscopy, TEM/EELS, Rutherford backscattering and nuclear reaction measurements, respectively. Field emission (FE) from these very smooth undoped and Cs-containing films is compared with the FE from two types of deliberately nanostructured carbon films, namely hot-filament chemical vapor deposition (HF-CVD) carbon and carbon nanotubes grown by plasma-enhanced CVD. Electron field emission (FE) characteristics were measured using ∼25-μm, ∼5-μm and ∼1-μm diameter probes that were scanned with ∼75 nm resolution in the x-, y-, and z-directions in a vacuum chamber (∼5 × 10-7 torr base pressure) equipped with a video camera for viewing. The hydrogen-free and very smooth a-D or a-C films (with high or low sp3 content, and with or without ∼1% Cs doping) produced by PLD and DMIBD are not good field emitters. Conditioning accompanied by arcing was required to obtain emission, so that their subsequent FE is characteristic of the arc-produced damage site. However, deliberate surface texturing can eliminate the need for conditioning, apparently by geometrical enhancement of the local electric field. But the most promising approach for producing macroscopically flat FE cathodes is to use materials that are highly nanostructured, either by the deposition process (e.g. HF-CVD carbon) or intrinsically (e.g. carbon nanotubes). HF-CVD films were found to combine a number of desirable properties for FE displays and vacuum microelectronics, including the absence of conditioning, low turn-on fields, high emission site density, and apparent stability and durability during limited long-term testing. Preliminary FE measurements revealed that vertically aligned carbon nanotubes are equally promising.

2004 ◽  
Vol 235 (1-2) ◽  
pp. 119-125 ◽  
Miguel Manso Silván ◽  
A. Valsesia ◽  
D. Gilliland ◽  
G. Ceccone ◽  
F. Rossi

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