Grain boundaries and stacking faults in a Pm3n cubic mesophase

1999 ◽  
Vol 26 (10) ◽  
pp. 1493-1499 ◽  
Author(s):  
S. D. HUDSON ◽  
H.-T. JUNG ◽  
P. KEWSUWAN ◽  
V. PERCEC ◽  
W.-D. CHO
1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.


Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.


1981 ◽  
Vol 5 ◽  
Author(s):  
C.B. Carter

ABSTRACTDislocations in low-angle tilt boundaries exhibit a wide variety of Burgers vector including a/2<112> a<001> and a<111>. The dislocations are usually dissociated: Shohkley, stair-rod and Frank partial dislocations may each be formed together with associated intrinsic and extrinsic stackingfaults. Dislocations in low-angle {111} twist boundaries are usually assumed to dissociated by a glide mechanism to give two types of extended nodes, known as P–type and K–type, which contain intrinsic and extrinsic stacking-faults respectively. It is shown that dissociation by climb actually occurs for both types of grain boundary.


1998 ◽  
Vol 538 ◽  
Author(s):  
M. Spaczér ◽  
H. Van Swygenhoven ◽  
A. Caro

AbstractWe report simulations on the plastic behaviour of nanocrystalline Ni and Cu with grain sizes in the range of 3-12 nm. We observe a change in deformation mechanism in both materials: at the smallest grain sizes all deformation is accommodated in the grain boundaries, while at higher grain sizes we observe intragrain deformation. Analysis of the atomic configurations shows that stacking faults are produced by the passage of partial dislocations generated and absorbed in opposite grain boundaries. In Cu, we observe the stacking faults at smaller grain sizes than in Ni (8 and 12nm, respectively), which is attributed to the lower stacking fault energy of copper. Dislocations appear on slip systems that are not necessarily those favoured by the Schmid factor. Atomic displacement analysis shows deformation starts at triple points, with grain boundary sliding followed by the creation of intragrain partial dislocations.


1998 ◽  
Vol 13 (3) ◽  
pp. 778-783 ◽  
Author(s):  
Yumi H. Ikuhara ◽  
Shinji Kondoh ◽  
Koichi Kikuta ◽  
Shin-ichi Hirano

Microstructures of ulexite were investigated by CTEM and low electron dose HREM. It was found that the longitudinal grains in ulexite were oriented to c-direction to form a bundle structure. There were a number of small-angle grain boundaries and stacking faults inside a grain in the ulexite. Cleavage microcracks and stacking faults were mostly introduced on the {010} of the ulexite. The high-angle grain boundaries mainly consisted of high coincidence boundaries, which was confirmed by a comparison of observed contact angles and calculated degree of coincidence at the boundaries. The light transmittance properties of the ulexite would depend on the defects such as stacking fault, small-angle grain boundary, and high-angle grain boundary.


1990 ◽  
Vol 213 ◽  
Author(s):  
K. Hampel ◽  
D.D. Vvedensky ◽  
S. Crampin

ABSTRACTA detailed understanding of planar defects plays an important role in the search for a comprehensive description of the mechanical behaviour of metals and alloys. We present calculations for isolated stacking faults and grain boundaries using the layer Korringa-Kohn-Rostoker method including an assessment of the force theorem, which has already proven itself in evaluating defect energies for elemental close-packed metals. These ab initio total energy calculations will be supplemented by a study of the changes in bonding and local magnetic properties near a symmetric Σ5 (310) grain boundary in Fe


2003 ◽  
Vol 83 (5) ◽  
pp. 325-331 ◽  
Author(s):  
R. Yu ◽  
Q. Zhan ◽  
L. L. He ◽  
Y. C. Zhou ◽  
H. Q. Ye

1992 ◽  
Vol 295 ◽  
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs

AbstractThe interlocking of Nb1+αS2 platelets developed during sulfidation of Nb results in formation of a compact scale. The atomic structure and defects of these platelets were investigated using HREM. The resulting microstructure is very different from conventional microstructure consisting of polygonal grains and polyhedral grain boundaries because of the anisotropy of the crystal structure. The principal phase was identified as 3R-Nb2+αS2 intergrown with 2H-Nb1+αS2, or with some other arrangement of S-Nb-S slabs. The -S6- octahedral sites between two S-Nb-S slabs provide accommodation for extra Nb or foreign atoms and the large non-stoichiometry of Nb1+αS2. Stacking faults along the c axis account for the high density of planar defect structures observed within almost every platelet. Axial lattice fringe images and streaking in the diffraction pattern indicate that the planar defects are normal to the c direction.


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