Microwave plasma-assisted deposition of boron doped single crystal diamond

ABSTRACTThe boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.

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Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films

MRS Proceedings ◽

10.1557/opl.2012.461 ◽

2012 ◽

Vol 1395 ◽

Cited By ~ 1

Author(s):

Shannon. N. Demlow ◽

I. Berkun ◽

M. Becker ◽

T. Hogan ◽

T.A. Grotjohn

Keyword(s):

Single Crystal ◽

Microwave Plasma ◽

Growth Parameters ◽

Diamond Films ◽

Boron Doped Diamond ◽

High Quality ◽

Boron Doped ◽

Single Crystal Diamond ◽

Wide Range ◽

Boron Level

ABSTRACTHigh quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

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Microwave plasma assisted synthesis of single crystal diamond at high pressures and high power densities

2011 Abstracts IEEE International Conference on Plasma Science ◽

10.1109/plasma.2011.5992941 ◽

2011 ◽

Author(s):

J. Lu ◽

Y. Gu ◽

D. K. Reinhard ◽

T. A. Grotjohn ◽

J. Asmussen

Keyword(s):

Single Crystal ◽

High Power ◽

High Pressures ◽

Microwave Plasma ◽

Single Crystal Diamond ◽

Power Densities

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Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽

10.1039/d1ce01373d ◽

2022 ◽

Author(s):

Wei Cao ◽

Zhibin Ma ◽

Hongyang Zhao ◽

Deng Gao ◽

Qiuming Fu

Keyword(s):

Chemical Vapor Deposition ◽

Single Crystal ◽

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Lateral Growth ◽

Plasma Reactors ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

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