Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shannon. N. Demlow ◽  
I. Berkun ◽  
M. Becker ◽  
T. Hogan ◽  
T.A. Grotjohn
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
High Quality ◽  
Boron Doped ◽  
Single Crystal Diamond ◽  
Wide Range ◽  
Boron Level

ABSTRACTHigh quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

High-speed synthesis of heavily boron-doped diamond films by in-liquid microwave plasma CVD

2019 ◽  
Vol 92 ◽  
pp. 41-46 ◽  
Author(s):  
Yohei Harada ◽  
Ryota Hishinuma ◽  
Nicolae Spătaru ◽  
Yusei Sakurai ◽  
Kazuya Miyasaka ◽  
...  
Keyword(s):  
High Speed ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Plasma Cvd ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Microwave Plasma Cvd

Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

Hydrogen diffusion in polycrystalline boron doped and undoped diamond.

2004 ◽  
Vol 813 ◽  
Author(s):  
D. Ballutaud ◽  
A. Boutry-Forveille ◽  
J.-M. Laroche ◽  
N. Simon ◽  
H. Girard ◽  
...  
Keyword(s):  
Hydrogen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Tracer Diffusion ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Different Temperatures ◽  
Hydrogen Deuterium ◽  
Hot Filament

ABSTRACTHydrogen (deuterium used as tracer) diffusion experiments were performed on undoped and boron doped diamond films ([B] = 1019and 1020 cm−3) grown by plasma CVD or hot-filament assisted CVD. The samples were exposed either to a radiofrequency plasma or a microwave plasma at different temperatures between 400°C and 900°C. The deuterium profiles were analysed by secondary ion mass spectrometry (SIMS). The deuterium diffusion was explained mainly in term of trapping on intergranular defects. The passivation of boron acceptors, by B-D complex formation in the deuterium diffused superficial layers of the diamond films, was followed by electrochemical and mercury probe capacitance measurements. The results suggest a strong decrease of the free carrier density, which is in accordance with passivation of free carriers by deuterium trapping on dopant.

Determination of Boron Concentration in Doped Diamond Films

2011 ◽  
Vol 1282 ◽  
Author(s):  
S.N. Demlow ◽  
T.A. Grotjohn ◽  
T. Hogan ◽  
M. Becker ◽  
J. Asmussen
Keyword(s):  
Boron Concentration ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

ABSTRACTThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

Single Crystal Boron-Doped Diamond Synthesis

2009 ◽  
Vol 1203 ◽  
Author(s):  
Timothy Grotjohn ◽  
Shannon Nicley ◽  
Dzung Tran ◽  
Donnie K. Reinhard ◽  
Michael Becker ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Dopant Activation ◽  
Boron Doped ◽  
Boron Dopant ◽  
Boron Acceptor

AbstractThe electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at pressures of 130-160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 1 to 50 ppm. The boron acceptor concentration is investigated using infrared absorption and a four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.

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