The chemical physics of low-energy ion beam-surface interactions: The panorama of phenomena involved

1990 ◽  
Vol 112 (4) ◽  
pp. 119-134 ◽  
Author(s):  
Srinandan R. Kasi ◽  
J. Wayne Rabalais
Keyword(s):  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Chemical Physics ◽  
Beam Surface

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Role of low-energy neutral N2 beam-surface interactions leading to spacecraft glow

1990 ◽  
Author(s):  
Alan V. Barnes ◽  
Royal G. Albridge ◽  
Jining Qi ◽  
Manfred Riehl-Chudoba ◽  
C. Sun ◽  
...  
Keyword(s):  
Surface Interactions ◽  
Low Energy ◽  
Beam Surface

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

1993 ◽  
Vol 316 ◽  
Author(s):  
T. Stacy ◽  
B. Y. Liaw ◽  
A. H. Khan ◽  
G. Zhao ◽  
E. M. Charlson ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Substrates ◽  
Scanning Electron Micrographs ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Beam Surface

ABSTRACTLow energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

A telescope counter detection system applied to low-energy ion-beam surface analysis

1974 ◽  
Vol 119 ◽  
pp. 373-380 ◽  
Author(s):  
Jean-Paul Thomas ◽  
Jean Engerran ◽  
Alain Cachard ◽  
Jacques Tardy
Keyword(s):  
Surface Analysis ◽  
Detection System ◽  
Ion Beam ◽  
Low Energy ◽  
Beam Surface

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Sign in / Sign up

Export Citation Format

Share Document