Polycyclic musks in the environment: A review of their concentrations and distribution, ecological effects and behavior, current concerns and future prospects

AbstractThe target article by Boyer & Petersen (B&P) contributes a vital message: that people have folk economic theories that shape their thoughts and behavior in the marketplace. This message is all the more important because, in the history of economic thought, Homo economicus was increasingly stripped of mental capacities. Intuitive theories can help restore the mind of Homo economicus.

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The parent-offspring microbiome and neurobehavioral development

Behavioral and Brain Sciences ◽

10.1017/s0140525x18002819 ◽

2019 ◽

Vol 42 ◽

Author(s):

Jeffrey R. Alberts ◽

Christopher Harshaw ◽

Gregory E. Demas ◽

Cara L. Wellman ◽

Ardythe L. Morrow

Keyword(s):

Mammalian Species ◽

Social Emotional ◽

Behavioral Measures ◽

Neurobehavioral Development ◽

Emotional Function ◽

Neurobehavioral Outcomes ◽

Methodological Approaches ◽

And Behavior

Abstract We identify the significance and typical requirements of developmental analyses of the microbiome-gut-brain (MGB) in parents, offspring, and parent-offspring relations, which have particular importance for neurobehavioral outcomes in mammalian species, including humans. We call for a focus on behavioral measures of social-emotional function. Methodological approaches to interpreting relations between the microbiota and behavior are discussed.

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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