Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems

Author(s):  
R. Grieseler ◽  
J. Klaus ◽  
M. Stubenrauch ◽  
K. Tonisch ◽  
S. Michael ◽  
...  
2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han

2015 ◽  
Vol 742 ◽  
pp. 773-777
Author(s):  
Qun Feng Yang ◽  
Jian Yi Zheng ◽  
Jun Qing Wang ◽  
Jun Hui Lin ◽  
Xue Nan Zhao ◽  
...  

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.


2013 ◽  
Vol 228 ◽  
pp. S328-S330 ◽  
Author(s):  
Guo-an Cheng ◽  
Dong-yan Han ◽  
Chang-lin Liang ◽  
Xiao-ling Wu ◽  
Rui-ting Zheng

2009 ◽  
Vol 24 (9) ◽  
pp. 2974-2985 ◽  
Author(s):  
Erik G. Herbert ◽  
Warren C. Oliver ◽  
Maarten P. de Boer ◽  
George M. Pharr

A new method is proposed to determine the elastic modulus and residual stress of freestanding thin films based on nanoindentation techniques. The experimentally measured stiffness-displacement response is applied to a simple membrane model that assumes the film deformation is dominated by stretching as opposed to bending. Dimensional analysis is used to identify appropriate limitations of the proposed model. Experimental verification of the method is demonstrated for Al/0.5 wt% Cu films nominally 22 µm wide, 0.55 µm thick, and 150, 300, and 500 µm long. The estimated modulus for the four freestanding films match the value measured by electrostatic techniques to within 2%, and the residual stress to within 19.1%. The difference in residual stress can be completely accounted for by thermal expansion and a modest change in temperature of 3 °C. Numerous experimental pitfalls are identified and discussed. Collectively, these data and the technique used to generate them should help future investigators make more accurate and precise measurements of the mechanical properties of freestanding thin films using nanoindentation.


1999 ◽  
Author(s):  
Mauro J. Kobrinsky ◽  
Erik R. Deutsch ◽  
Stephen D. Senturia

Abstract Doubly-supported surface-micromachined beams are increasingly used to study the mechanical properties of thin films. Residual stresses in the beams cause significant vertical deflections, which affect the performance of these devices. We present here both experimental results for doubly-supported polysilicon surface-micromachined beams, and an elastic model of the devices that takes into account the compliance of the supports and the geometrical non-linear dependence of the vertical deflections on the stress in the beam. An elastic one-dimensional model was used for the beams, and the response of the supports to forces and moments was obtained using Finite Element Method simulations. The model explains a previously observed gradual increase of the maximum vertical deflections of the beams with increasing length at a given constant residual stress, and, in agreement with experimental observations, predicts two stable states for compressively stressed beams: one with the beam bent up, the other down.


2010 ◽  
Vol 205 (5) ◽  
pp. 1393-1397 ◽  
Author(s):  
Carlos E.K. Mady ◽  
Sara A. Rodriguez ◽  
Adriana G. Gómez ◽  
Roberto M. Souza

2005 ◽  
Vol 31 (3) ◽  
pp. 356-363 ◽  
Author(s):  
S. H. Ko ◽  
D. W. Lee ◽  
S. E. Jee ◽  
H. C. Park ◽  
K. H. Lee ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
A. Mallik ◽  
B. C. Ray

This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.


2020 ◽  
Vol 65 ◽  
pp. 27-38
Author(s):  
Sara Benzitouni ◽  
Mourad Zaabat ◽  
Jean Ebothé ◽  
Abdelhakim Mahdjoub ◽  
Meriem Guemini

Undoped and transition metals (TM = Cr, Ni, Mn and Cd) doped zinc oxide (ZnO) thin films were prepared by sol-gel dip-coating method on glass substrates at 300 °C. In this study, the effect of dopant material on the structural, morphological, optical, electrical and mechanical properties of ZnO thin films is investigated by using XRD, AFM, UV-Vis, Hall effect and nanoindentation techniques, respectively. Nanocrystalline films with a ZnO hexagonal wurtzite structure and two preferred orientations (002) and (103) were obtained. UV-Vis transmittance spectra showed that all the films are highly transparent in the visible region (> 80 %). Moreover, the optical band gap of the films decreased to 3.13 eV with an increasing orbital occupation number of 3d electrons. AFM-topography shows that the films are dense, smooth and uniform, except for the high roughness RMS =26.3 nm obtained for Cd-doped ZnO. Finally, the dopant material is found to have a significant effect on the mechanical behavior of ZnO as compared to the undoped material. For Ni and Cd dopants, analysis of load and unload data yields an increase in the hardness (8.96 ± 0.22 GPa) and Young’s modulus (122 ± 7.46 GPa) of ZnO as compared to Cr and Mn dopants. Therefore, Ni and Cd are the appropriate dopants for the design and application of ZnO-based nanoelectromechanical systems.


Sign in / Sign up

Export Citation Format

Share Document