scholarly journals Evolution of Principle and Practice of Electrodeposited Thin Film: A Review on Effect of Temperature and Sonication

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
A. Mallik ◽  
B. C. Ray

This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.

2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.


2011 ◽  
Vol 254 ◽  
pp. 167-170 ◽  
Author(s):  
Subodh Srivastava ◽  
Sumit Kumar ◽  
Vipin Kumar Jain ◽  
Y.K. Vijay

In the present work we have reported the effect of temperature on the gas sensing properties of pure Polyaniline (PANI) and Multiwall carbon nanotube (MWNT) doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and MWNT doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline using ammonium persulfate in an acidic medium. The thin sensing film of chemically synthesized PANI and MWNT doped PANI composite were deposited onto finger type Cu-interdigited electrodes using spin cast technique to prepared chemiresistor type gas sensor. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature, MWNT doped PANI composite sensor shows higher response value and sensitivity with good repeatability in comparison to pure PANI thin film sensor. It was also observed that both PANI and MWNT doped PANI composite thin film based sensors showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.


1988 ◽  
Vol 3 (5) ◽  
pp. 931-942 ◽  
Author(s):  
T. P. Weihs ◽  
S. Hong ◽  
J. C. Bravman ◽  
W. D. Nix

The mechanical deflection of cantilever microbeams is presented as a new technique for testing the mechanical properties of thin films. Single-layer microbeams of Au and SiO2 have been fabricated using conventional silicon micromachining techniques. Typical thickness, width, and length dimensions of the beams are 1.0,20, and 30 μm, respectively. The beams are mechanically deflected by a Nanoindenter, a submicron indentation instrument that continuously monitors load and deflection. Using simple beam theory and the load-deflection data, the Young's moduli and the yield strengths of thin-film materials that comprise the beams are determined. The measured mechanical properties are compared to those obtained by indenting similar thin films supported by their substrate.


2005 ◽  
Vol 908 ◽  
Author(s):  
Kristoffer Meinander ◽  
Tina Clauss ◽  
Kai Nordlund

AbstractMechanical properties of thin films grown by nanocluster deposition are highly dependent on the energy at which the clusters are deposited. Using molecular dynamics computer simulations we have quantitatively studied variations in the properties of copper thin films grown by deposition of Cu nanoclusters, at energies ranging from 5 meV to 10 eV per cluster atom, on a Cu (100) substrate.


1994 ◽  
Vol 356 ◽  
Author(s):  
H. Deng ◽  
V. R. Inturi ◽  
J. A. Barnard

AbstractMechanical and tribological properties of soft magnetic thin films with high permeability and low coercivity are very important for the application of these films in high-density recording heads. This paper reports our experimental observations on these important properties of FeTaN thin film head materials. Hardness(H) and Young’s modulus(E) for FeTaN sputtered films were determined by nanoindentation. Wear resistance of these films against commercial magnetic tapes was measured with a sphere-on-flat wear tester. The experimental results indicate that the FeTa films can be hardened when nitrogen is introduced. It was found in this study that the thermal stability of the mechanical properties such as hardness of thin films containing nitrogen is better than that of the film without nitrogen. However, our experiments also revealed that the wear resistance of FeTaN films decreases when the concentration of nitrogen increases and the hardness of the worn surface at a wear scar is lower than that of the unworn surface.


Author(s):  
Zhaohui Shan ◽  
Suresh K. Sitaraman

Titanium thin films have been widely used in microelectronics due to their good adhesion to substrates, such as Silicon wafer and Quartz. However, mechanical behavior of Titanium thin films has not been well characterized. This paper presents a methodology that combines the nanoindentation technique and finite element modeling to characterize the mechanical (elastic and plastic) properties of thin film with its application on Titanium thin film deposited on silicon substrate. The results show that the elastic properties (Young’s modulus) of the Titanium thin film does not change much from the bulk Titanium, and the plastic properties (yield stress and strain hardening exponent) of the Titanium thin film are higher than those of bulk Titanium. This method is also applicable for the study of mechanical properties of other thin films and small volume materials.


2015 ◽  
Vol 742 ◽  
pp. 773-777
Author(s):  
Qun Feng Yang ◽  
Jian Yi Zheng ◽  
Jun Qing Wang ◽  
Jun Hui Lin ◽  
Xue Nan Zhao ◽  
...  

The purpose of this work is to study the mechanical characteristics of the silicon nitride(SiNx) thin films prepared by PECVD technique, some researches as follows were carried out. First, the SiNx thin films were deposited on the two different substrates. Then, the atomic force microscope (AFM) was adopted to test the surface quality of the SiNxfilms, and the scanning electron microscope (SEM) was used to test the section morphology of the SiNxthin films. Finally, the rotating beam structures was applied to measure the residual stress in the SiNx films. The SiNxthin films with low stress can be fabricated through PECVD, in which the surface roughness values(Ra) are 1.261 nm and 2.383nm, and the residual stress is 43.5 kPa. Therefore, the SiNxthin films deposited by PECVD are suitable for the preparation of device dielectric films in MEMS.


2003 ◽  
Vol 795 ◽  
Author(s):  
Alex A. Volinsky ◽  
Dirk C. Meyer ◽  
Tilmann Leisegang ◽  
Peter Paufler

ABSTRACTWhile there are many stress relief mechanisms observed in thin films, excessive residual and externally applied stresses cause film fracture. In the case of tensile stress a network of through-thickness cracks forms in the film. In the case of compressive stress thin film buckling is observed in the form of blisters. Thin film delamination is an inseparable phenomenon of buckling. The buckling delamination blisters can be either circular, straight, or form periodic buckling patterns commonly known as telephone cord delamination morphology.While excessive biaxial residual stress is the key for causing thin film fracture, either in tension, or compression, it is the influence of the external stress that can control the final fracture pattern. In this paper we consider phone cord buckling delamination observed in compressed W/Si and TiWN/GaAs thin film systems, as well as spiral and sinusoidal though-thickness cracks observed in Mo/Si multilayers under 3-point high-temperature bending in tension.


1992 ◽  
Vol 7 (6) ◽  
pp. 1553-1563 ◽  
Author(s):  
Martha K. Small ◽  
W.D. Nix

Since its first application to thin films in the 1950's the bulge test has become a standard technique for measuring thin film mechanical properties. While the apparatus required for the test is simple, interpretation of the data is not. Failure to recognize this fact has led to inconsistencies in the reported values of properties obtained using the bulge test. For this reason we have used the finite element method to model the deformation behavior of a thin film in a bulge test for a variety of initial conditions and material properties. In this paper we will review several of the existing models for describing the deformation behavior of a circular thin film in a bulge test, and then analyze these models in light of the finite element results. The product of this work is a set of equations and procedures for analyzing bulge test data that will improve the accuracy and reliability of this technique.


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