A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

1993 ◽  
Vol 303 ◽  
Author(s):  
Xiaowei Ren ◽  
Mehmet C. Öztürk ◽  
Douglas T. Grider ◽  
Mahesh Sanganeria ◽  
Stanton Ashburn
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Sacrificial Layer ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Mos Transistors ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTIn this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

2004 ◽  
Vol T114 ◽  
pp. 31-33
Author(s):  
J Hållstedt ◽  
A Parent ◽  
S-L Zhang ◽  
M Östling ◽  
H H Radamson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Boron Doped

Improvement of crystallinity of epitaxial Si1−xGex films with SiH4 treatment in in-situ rapid thermal chemical vapor deposition

1992 ◽  
Vol 60-61 ◽  
pp. 597-601
Author(s):  
Kinya Ashikaga ◽  
Morifumi Ohno ◽  
Toshiyuki Nakamura ◽  
Hisashi Fukuda ◽  
Seigo Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

ChemInform Abstract: The Low Pressure Chemical Vapor Deposition (LPCVD) of in situ Boron-Doped Polysilicon

ChemInform ◽  
1988 ◽  
Vol 19 (43) ◽  
Author(s):  
C. M. MARITAN ◽  
L. P. BERNDT ◽  
N. G. TARR ◽  
J. M. BULLERWELL ◽  
G. M. JENKINS
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Boron Doped ◽  
Pressure Chemical

In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor

1993 ◽  
Vol 303 ◽  
Author(s):  
M. L. Green ◽  
D. Brasen ◽  
H. Luftman ◽  
T. Boone ◽  
K. Krisch
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Thermal Mass ◽  
Contamination Control ◽  
Thermal Chemical Vapor Deposition ◽  
Ideal Candidate ◽  
In Situ Processing

ABSTRACTAlthough the benefits of in-situ processing seem intuitively obvious as higher yield due to particle and contamination control, there is presently little data to support these claims. However, materials characterization data on in-situ grown films suggest that it will be advantageous. In this paper we explore the advantages of in-situ processing in a load-locked rapid thermal chemical vapor deposition (RTCVD) chamber for such processes as cleaning, epitaxial growth, oxidation and polysilicon growth. The cold wall nature and low thermal mass of the RTCVD chamber make it an ideal candidate for a cluster module for thermal processing in an integrated process tool.

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