The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

2015 ◽  
Vol 30 (10) ◽  
pp. 105012 ◽  
Author(s):  
Guangmin Li ◽  
Wei Liu ◽  
Yiming Liu ◽  
Shuping Lin ◽  
Xiaodong Li ◽  
...  
2011 ◽  
Vol 258 (1) ◽  
pp. 120-125 ◽  
Author(s):  
Se Jin Park ◽  
Eunjoo Lee ◽  
Hyo Sang Jeon ◽  
Se Jin Ahn ◽  
Min-Kyu Oh ◽  
...  

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.


Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


Sign in / Sign up

Export Citation Format

Share Document