Ultra-High Speed Composition Graded InGaAsSb/GaAsSb Double Heterojunction Bipolar Transistors with fT=500GHz grown by Gas-Source Molecular Beam Epitaxy
2006 ◽
Vol 24
(3)
◽
pp. 1564
◽
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1866-1868
◽
1996 ◽
Vol 14
(3)
◽
pp. 2225
◽
1992 ◽
Vol 7
(3)
◽
pp. 425-428
◽
2007 ◽
Vol 28
(8)
◽
pp. 679-681
◽
2006 ◽
Vol 35
(2)
◽
pp. 266-272
◽