The study of a single-electron memory cell using coupled multiple tunnel-junction arrays

2001 ◽  
Vol 12 (2) ◽  
pp. 178-180 ◽  
Author(s):  
Mincheol Shin ◽  
Seongjae Lee ◽  
Kyoung Wan Park
Keyword(s):  
Tunnel Junction ◽  
Memory Cell ◽  
Single Electron ◽  
Junction Arrays

Photo-Irradiation Effects in Single-Electron Tunnel Junction Arrays

1997 ◽  
Author(s):  
Yoichi Terao ◽  
Michiharu Tabe ◽  
Noboru Asahi ◽  
Yoshihito Amemiya
Keyword(s):  
Tunnel Junction ◽  
Single Electron ◽  
Irradiation Effects ◽  
Junction Arrays

OHMIC PROPERTY OF A SINGLE-ELECTRON TUNNEL-JUNCTION SYSTEM AND ITS APPLICATION TO NEURAL NETWORK SYNAPSES

2004 ◽  
Vol 18 (10n11) ◽  
pp. 1457-1464
Author(s):  
MINCHEOL SHIN
Keyword(s):  
Neural Network ◽  
Tunnel Junction ◽  
Coulomb Blockade ◽  
Tunneling Current ◽  
Hopfield Neural Network ◽  
Single Electron ◽  
Switching Function ◽  
Variable Resistor ◽  
Current Flows ◽  
Junction Arrays

We have studied the ohmic property of parallel coupled single-electron tunnel-junction arrays. When a current flows in one array ('driving' array), the Coulomb blockade state of the other array ('passive' array) is lifted, leading to an ohmic relationship between the tunneling current and the bias voltage. The driving current basically plays the role of a switch for the current in the passive array, as it can vary the ohmic conductance as well. Since the ohmic characteristic and the switching function are quite robust to the background or stray charges, the parallel coupled tunnel-junction system can be used as a variable resistor in logic circuits. As its specific application, we have proposed a Hopfield neural network with single-electron synapses.

scholarly journals Single-electron soliton avalanches in tunnel-junction arrays

2001 ◽  
Vol 64 (4) ◽  
Author(s):  
Viktor A. Sverdlov ◽  
Daniel M. Kaplan ◽  
Alexander N. Korotkov ◽  
Konstantin K. Likharev
Keyword(s):  
Tunnel Junction ◽  
Single Electron ◽  
Junction Arrays

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

scholarly journals Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays

2010 ◽  
Vol 108 (5) ◽  
pp. 053710 ◽  
Author(s):  
Kiyohito Yokoi ◽  
Daniel Moraru ◽  
Takeshi Mizuno ◽  
Michiharu Tabe
Keyword(s):  
Single Electron ◽  
Electrical Control ◽  
Junction Arrays

scholarly journals Single-Electron Memories

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 219-223 ◽  
Author(s):  
Christoph Wasshuber ◽  
Hans Kosina ◽  
Siegfried Selberherr
Keyword(s):  
Power Consumption ◽  
Room Temperature ◽  
State Of The Art ◽  
Memory Cell ◽  
Single Electron ◽  
Lower Power ◽  
Memory Chip ◽  
Single Electronics ◽  
Background Charge ◽  
Random Background

One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.

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