A comparative study on the forming methods of chalcogenide memristors to optimize the resistive switching performance

2020 ◽  
Vol 53 (44) ◽  
pp. 445108
Author(s):  
Himangshu Jyoti Gogoi ◽  
Arun Tej Mallajosyula
Keyword(s):  
Comparative Study ◽  
Resistive Switching ◽  
Switching Performance ◽  
Forming Methods

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

2021 ◽  
Vol 12 (7) ◽  
pp. 1973-1978
Author(s):  
Fanju Zeng ◽  
Yongqian Tan ◽  
Wei Hu ◽  
Xiaosheng Tang ◽  
Zhongtao Luo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Hydroiodic Acid ◽  
Switching Performance

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

scholarly journals Size-controlled resistive switching performance and regulation mechanism of SnO2 QDs

2021 ◽  
Vol 70 (19) ◽  
pp. 197301
Author(s):  
Shao-Kang Gong ◽  
Jing Zhou ◽  
Zhi-Qing Wang ◽  
Mao-Cong Zhu ◽  
Jie Shen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Regulation Mechanism ◽  
Switching Performance ◽  
Size Controlled

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

2010 ◽  
Vol 3 (9) ◽  
pp. 091101 ◽  
Author(s):  
Jaehoon Song ◽  
Akbar I. Inamdar ◽  
ByeongUk Jang ◽  
Kiyoung Jeon ◽  
YoungSam Kim ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Switching Performance

Ab initio phase diagrams of Hf–O, Zr–O and Y–O: a comparative study

2019 ◽  
Vol 213 ◽  
pp. 321-337 ◽  
Author(s):  
Konstantin Z. Rushchanskii ◽  
Stefan Blügel ◽  
Marjana Ležaić
Keyword(s):  
Comparative Study ◽  
Ab Initio ◽  
Phase Diagrams ◽  
Resistive Switching ◽  
Binary Oxides ◽  
Host Materials ◽  
Evolutionary Simulations ◽  
Switching Devices

We present phase diagrams of binary oxides, Hf–O, Zr–O and Y–O, obtained by ab initio evolutionary simulations, in order to explore possible metastable crystalline suboxide structures which could be quenched during the electroforming processes within the conductive filaments in stoichiometric HfO2, ZrO2 and Y2O3 host materials, in resistive switching devices.

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