Characterization of micro-scale residual stress around thermal grown oxide using micro-slotting method and geometric phase analysis

2018 ◽  
Vol 29 (3) ◽  
pp. 035202 ◽  
Author(s):  
Q Zhang ◽  
H Xie ◽  
Z Liu ◽  
X Dai
Keyword(s):  
Residual Stress ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Micro Scale ◽  
Thermal Grown Oxide ◽  
Geometric Phase Analysis

Residual stress assessment of interconnects by slot milling with FIB and geometric phase analysis

2010 ◽  
Vol 48 (11) ◽  
pp. 1113-1118 ◽  
Author(s):  
Qinghua Wang ◽  
Huimin Xie ◽  
Zhanwei Liu ◽  
Xinhao Lou ◽  
Jianfeng Wang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Stress Assessment ◽  
Slot Milling ◽  
Geometric Phase Analysis

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

2011 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Process Development ◽  
Local Strain ◽  
Strain Engineering ◽  
Dark Field ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

Dislocation core investigation by geometric phase analysis and the dislocation density tensor

2008 ◽  
Vol 41 (3) ◽  
pp. 035408 ◽  
Author(s):  
J Kioseoglou ◽  
G P Dimitrakopulos ◽  
Ph Komninou ◽  
Th Karakostas ◽  
E C Aifantis
Keyword(s):  
Dislocation Density ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Dislocation Core ◽  
Density Tensor ◽  
Geometric Phase Analysis ◽  
Dislocation Density Tensor

scholarly journals Effect of lattice mismatch and shell thickness on strain in core@shell nanocrystals

2020 ◽  
Vol 2 (3) ◽  
pp. 1105-1114 ◽  
Author(s):  
Jocelyn T. L. Gamler ◽  
Alberto Leonardi ◽  
Xiahan Sang ◽  
Kallum M. Koczkur ◽  
Raymond R. Unocic ◽  
...  
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Shell Thickness ◽  
Lattice Mismatch ◽  
Lattice Relaxation ◽  
Atomistic Simulations ◽  
Core Shell ◽  
Geometric Phase Analysis ◽  
Bimetallic Nanocrystals

Bimetallic nanocrystals with core@shell architectures are versatile particles. Geometric phase analysis of TEM images and atomistic simulations are coupled to reveal the lattice relaxation as a function of lattice mismatch and shell thickness.

scholarly journals Geometric Phase Analysis of Strain in Naturally Deformed Olivine

2003 ◽  
Vol 9 (S02) ◽  
pp. 952-953
Author(s):  
C.L. Johnson ◽  
M.J. Hÿtch ◽  
P.R. Buseck
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Geometric Phase Analysis

Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 303-308 ◽  
Author(s):  
N. Cherkashin ◽  
Martin J. Hÿtch ◽  
Fuccio Cristiano ◽  
A. Claverie
Keyword(s):  
Electron Microscopy ◽  
Geometric Phase ◽  
Low Energy ◽  
High Dose ◽  
Dislocation Loops ◽  
Weak Beam ◽  
Transmission Electron ◽  
Geometric Phase Analysis

In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of 1x1015 ions/cm2 and annealed at 650°C and 750°C during different times up to 160 s. The clusters were characterized by making use of Weak Beam and High Resolution Transmission Electron Microscopy (HRTEM) imaging. They are found to be platelets of several nanometer size with (001) habit plane. Conventional TEM procedure based on defect contrast behavior was applied to determine the directions of their Burger’s vectors. Geometric Phase Analysis of HRTEM images was used to measure the displacement field around these objects and, thus, to unambiguously determine their Burger’s vectors. Finally five types of dislocation loops lying on (001) plane are marked out: with ] 001 [1/3 ≅ b and b ∝ [1 0 1], [-1 0 1], [0 1 1], [0 -1 1].

Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film

2009 ◽  
Vol 1199 ◽  
Author(s):  
Takanori Kiguchi ◽  
Kenta Aoyagi ◽  
Toyohiko J. Konno ◽  
Satoru Utsugi ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Analysis ◽  
Misfit Dislocation ◽  
Geometric Phase ◽  
Misfit Dislocations ◽  
Epitaxial Thin Film ◽  
Strain Fields ◽  
Geometric Phase Analysis ◽  
Domain Configuration ◽  
A Domains

AbstractThe nano-scale strain fields analysis around 90° domains and misfit dislocations in PbTiO3/SrTiO3 001 epitaxial thin film has been conducted using the geometric phase analysis (GPA) combined with high angle annular dark field - scanning transmission electron microscopy (HAADF-STEM). The films typically possess a-c mixed domain configuration with misfit dislocations. The PbTiO3 layer was formed from the two layer: the upper 200 nm layer shows the typical a- and c- mixed domain configuration where the a-domains are several tens nm in width; the bottom 100 nm layer shows the different domain configuration that the width is several nm. In the latter case, a-domains are terminated within the film and are short in length. On the other hand, the bottom of a-domains does not contact the film/substrate interface. It keeps away from the interface, and there is completely c-domain layer under a-domains. The HAADF-STEM-GPA shows that the strain fields around an a-domain and a misfit dislocation interact each other: the tensile strain field and lattice plane bending fit together. This result indicates that the a-domain originates from the misfit dislocation.

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