Extraction of p-n junction properties and series resistance in GaAs nanowire-based solar cells using light concentration

2019 ◽  
Vol 30 (9) ◽  
pp. 094001 ◽  
Author(s):  
Dmitry Mikulik ◽  
Mikhail Mintairov ◽  
Ian Nachemson ◽  
Valery Evstropov ◽  
Pablo Romero-Gomez ◽  
...  
Author(s):  
M. Kasemann ◽  
L.M. Reindl ◽  
B. Michl ◽  
W. Warta ◽  
A. Schütt ◽  
...  

Abstract Conventional series resistance imaging methods require electrical contacts for current injection or extraction in order to generate lateral current flow in the solar cell. This paper presents a new method to generate lateral current flow in the solar cell without any electrical contacts. This reduces the sample handling complexity for inline application and allows for measurements on unfinished solar cell precursors.


Author(s):  
Carey Reich ◽  
Arthur Onno ◽  
Alexandra Bothwell ◽  
Anna Kindvall ◽  
Zachary Holman ◽  
...  

2014 ◽  
Vol 4 (6) ◽  
pp. 1511-1517 ◽  
Author(s):  
Ningfeng Huang ◽  
Michelle L. Povinelli

2012 ◽  
Vol 8 (4) ◽  
pp. 628-631 ◽  
Author(s):  
Tao Li ◽  
Wenjing Wang ◽  
Chunlan Zhou ◽  
Zhengang Liu ◽  
Lei Zhao ◽  
...  

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.


2016 ◽  
Vol 45 (4) ◽  
pp. 425002
Author(s):  
刘开贤 LIU Kai-xian ◽  
蔺吉虹 LIN Ji-hong ◽  
史建华 SHI Jian-hua ◽  
田少华 TIAN Shao-hua

2019 ◽  
Vol 116 (48) ◽  
pp. 23966-23971 ◽  
Author(s):  
Muhammad A. Alam ◽  
M. Ryyan Khan

As monofacial, single-junction solar cells approach their fundamental limits, there has been significant interest in tandem solar cells in the presence of concentrated sunlight or tandem bifacial solar cells with back-reflected albedo. The bandgap sequence and thermodynamic efficiency limits of these complex cell configurations require sophisticated numerical calculation. Therefore, the analyses of specialized cases are scattered throughout the literature. In this paper, we show that a powerful graphical approach called the normalized “Shockley–Queisser (S-Q) triangle” (i.e., imp=1−vmp) is sufficient to calculate the bandgap sequence and efficiency limits of arbitrarily complex photovoltaic (PV) topologies. The results are validated against a wide variety of specialized cases reported in the literature and are accurate within a few percent. We anticipate that the widespread use of the S-Q triangle will illuminate the deeper physical principles and design trade-offs involved in the design of bifacial tandem solar cells under arbitrary concentration and series resistance.


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