scholarly journals Fabrication of junction-free Cu nanowire networks via Ru-catalyzed electroless deposition and their application to transparent conducting electrodes

2021 ◽  
Author(s):  
Jinkyu Song ◽  
Mee-Ree Kim ◽  
Youngtae Kim ◽  
Darae Seo ◽  
Kyungryul Ha ◽  
...  

Abstract Over the past few years, metal nanowire networks have attracted attention as an alternative to transparent conducting oxide materials such as indium tin oxide for transparent conducting electrode applications. Recently, electrodeposition of metal on nanoscale template is widely used for formation of metal network. In the present work, junctionless Cu nanowire networks were simply fabricated on a substrate by forming a nanostructured Ru with 80nm-width as a seed layer, followed by direct electroless deposition of Cu. By controlling the density of Ru nanowires or the electroless deposition time, we readily achieve desired transmittance and sheet resistance values ranging from ~1 kΩ/sq at 99% to 9 Ω/sq at 89%. After being transferred to flexible substrates, the nanowire networks exhibited no obvious increase in resistance during 8000 cycles of a bending test to a radius of 2.5 mm. The durability was verified by evaluation of its heating performance. The maximum temperature was greater than 180°C at 3 V and remained constant after three repeated cycles and for 10 min. Transmission electron microscopy and X-ray diffraction studies revealed that the adhesion between the electrolessly deposited Cu and the seed Ru nanowires strongly influenced the durability of the core-shell structured nanowire-based heaters.

2019 ◽  

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.


2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.


2016 ◽  
Vol 27 (5) ◽  
pp. 4913-4922 ◽  
Author(s):  
M. Duta ◽  
M. Anastasescu ◽  
J. M. Calderon-Moreno ◽  
L. Predoana ◽  
S. Preda ◽  
...  

2017 ◽  
Vol 5 (17) ◽  
pp. 4198-4205 ◽  
Author(s):  
Soram Bobby Singh ◽  
Yibin Hu ◽  
Tolendra Kshetri ◽  
Nam Hoon Kim ◽  
Joong Hee Lee

Flexible transparent conducting electrodes (TCEs) in replacement of brittle indium tin oxide (ITO) films are of ultimate importance in the production of flexible and stretchable displays, lighting devices, and solar panels with the ability to resist harsh weather conditions.


2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.


2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Kyung-Ho Chung ◽  
Md. Mahbubur Rahman ◽  
Hyun-Seok Son ◽  
Jae-Joon Lee

We fabricated well-aligned one-dimensional (1-D) titania nanotubes (TNT) on transparent conducting oxide (TCO) by anodization of Ti foil. Different lengths of TNTs were prepared by varying the applied potential (70 V) time, and we investigated the performance of these TNTs in dye-sensitized solar cells (DSSCs), transplanted onto a 6 μm TNP adhesion layer. The fabricated TNTs arrays (length 15 μm) photoelectrode showed 24% increased efficiency compared to the TNP photoelectrode of 17 μm thickness. We further investigated the performances of DSSCs for the TNTs (1 wt%) incorporated TNP photoelectrode and obtained 22% increased efficiency. The increased efficiency of the pure TNTs arrays and TNT-mixed TNP photoelectrodes was attributed to the directional electron movement of TNTs and light scattering effect of the TNT with the decreased rate of back electron transfer. The anodized and fabricated TNTs and DSSCs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), and electrochemical impedance spectroscopy (EIS).


2011 ◽  
Vol 399-401 ◽  
pp. 1915-1918
Author(s):  
Rui Jie Guo ◽  
Xiao Juan Sha ◽  
Lei Lei Cao

The lamellar nanostructured yttrium films on α-Al2O3 substrates were successfully synthesized by electroless deposition using the lyotropic liquid crystalline templating strategy. The reaction of hydrazine hydrate and Y3+ dissolved within the aqueous domains of the lyotropic liquid crystalline phase produced the nanostructured yttrium films. The low-angle X-ray diffraction (XRD), transmission electron microscope (TEM) and scanning electron microscope (SEM) indicated that the as-resulted films possessed lamellar regular array of nanochannels with periodicity of 6 nm. With well-defined nanochannels and higher surface areas, the nanostructured films may find applications in the field of electronic materials.


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