Low-energy electron beam generation in inductively coupled plasma via a DC biased grid

Low-energy electron beam generation using a DC biased grid was investigated in an inductively coupled plasma (ICP). The electron beam was measured in argon gas at various pressures, ICP source powers, and substrate voltages (Vsub). At a low ICP source power (50 W), an electron beam was generated even at small values of Vsub (10 V), however at a high ICP source power (200 W), an electron beam was only generated when a higher voltage (30 V) was applied due to the short sheath thickness on the grid surface. The sheath on the grid surface is an important factor for generating electron beams because low-energy electrons are blocked. If the sheath thickness to small, a high voltage should be applied to generate an electron beam, as accelerate regions cannot exist without the sheath. At high pressure, since electrons experience numerous neutral collisions, a high substrate voltage is needed to generate an electron beam. However, if the applied substrate voltage becomes too high (40 V) at high pressure, high-energy electrons result in secondary plasma under the grid. Therefore, maintaining a low pressure and low ICP source power is important for generating electron beams.