Conformal doping strategy for fin structures: tailoring of dopant profile through multiple monolayer doping and capping layer control

2020 ◽  
Vol 35 (5) ◽  
pp. 055028 ◽  
Author(s):  
Chul Jin Park ◽  
Sang Min Jung ◽  
Jin Hwan Kim ◽  
Moo Whan Shin
Keyword(s):  
Capping Layer ◽  
Dopant Profile ◽  
Layer Control

Multi-Layer Control and Graphical Feature Editing Using Server-Side Rendering on Ajax-GIS

2010 ◽  
Vol 130 (1) ◽  
pp. 146-153 ◽  
Author(s):  
Takeo Sakairi ◽  
Takashi Tamada ◽  
Katsuyuki Kamei ◽  
Yukio Goto ◽  
Hideo Nakata
Keyword(s):  
Server Side ◽  
Layer Control

White Layer Control on AISI 316L Using Temperature and Gas Nitriding Diffusion Stage Process

2017 ◽  
Vol 11 (8) ◽  
pp. 613
Author(s):  
Komang Astana Widi ◽  
Wardana Wardana ◽  
Wahyono Suprapto ◽  
Yudy Surya Irawan
Keyword(s):  
White Layer ◽  
Aisi 316L ◽  
Gas Nitriding ◽  
Diffusion Stage ◽  
Stage Process ◽  
Layer Control

Countercurrent shear layer control of flame stabilization

1997 ◽  
Author(s):  
E. Koc-Alkislar ◽  
L. Lourenco ◽  
A. Krothapalli ◽  
P. Strykowski ◽  
E. Koc-Alkislar ◽  
...  
Keyword(s):  
Shear Layer ◽  
Flame Stabilization ◽  
Countercurrent Shear ◽  
Layer Control

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

2011 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo
Keyword(s):  
Fatigue Resistance ◽  
Electrical Resistance ◽  
Metal Film ◽  
Flexible Substrate ◽  
Resistance Change ◽  
Cyclic Bending ◽  
Capping Layer ◽  
Bending Strain ◽  
Cu Film ◽  
Electrical Resistance Change

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.

Sign in / Sign up

Export Citation Format

Share Document