Quench transient current and quench propagation limit in pancake wound REBCO coils as a function of contact resistance, critical current, and coil size

2019 ◽  
Vol 32 (10) ◽  
pp. 105010 ◽  
Author(s):  
W Denis Markiewicz ◽  
Thomas Painter ◽  
Iain Dixon ◽  
Mark Bird
1989 ◽  
Vol 4 (3) ◽  
pp. 530-538 ◽  
Author(s):  
Meilin Liu ◽  
Lutgard C. De Jonghe

Potential and current distributions and local energy dissipation due to Joule heating in metal-superconductor junctions have been computed as a function of geometric parameters and interfacial resistance. The primary current distribution and power dissipation are highly nonuniform in the system. The secondary current distribution and power dissipation, however, become more uniform as the interfacial resistance increases. Analysis indicates that zero contact resistance is not a stable situation since the primary distribution leads to local current densities exceeding the critical current density of the superconducting phase near the corner of the junction. Local contact failure might then initiate. A finite contact resistance is necessary for a practical application, and the minimum value of the contact resistance can be estimated from the operating current density (javg) of the device and the critical current density (jcri) of the superconducting phase. To obtain an optimum value of the contact resistance, however, one further has to take into consideration the stability and reliability of the device performance, which is, in turn, directly related to the uniformity of the current distribution and power dissipation, to temperature fluctuation of the superconducting phases brought about by local power dissipation, and to the thermal management of the system. Furthermore, a nonuniform contact resistance layer of appropriate profile can redistribute the current more effectively and more uniformly and hence reduce the total power dissipation in the system for a given jmax/javg ratio obtained by a uniform resistance layer.


Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.


Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.


2017 ◽  
Vol 137 (4) ◽  
pp. 326-333
Author(s):  
Chiaki Nagai ◽  
Kenji Inukai ◽  
Masato Kobayashi ◽  
Tatsuya Tanaka ◽  
Kensho Abumi ◽  
...  

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.


2012 ◽  
Vol E95.C (9) ◽  
pp. 1531-1534 ◽  
Author(s):  
Kiyoshi YOSHIDA ◽  
Koichiro SAWA ◽  
Kenji SUZUKI ◽  
Masaaki WATANABE

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