Epsilon-near-zero indium tin oxide nanocolumns array as a saturable absorber for a Nd:BGO laser

Laser Physics ◽  
2020 ◽  
Vol 30 (5) ◽  
pp. 055802
Author(s):  
Qing-Hua Xiao ◽  
Xiao-Yue Feng ◽  
Wen Yang ◽  
Yun-Kun Lin ◽  
Qian-Qian Peng ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Epsilon Near Zero

scholarly journals Epsilon-near-zero medium for optical switches in a monolithic waveguide chip at 1.9 μm

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1835-1843 ◽  
Author(s):  
Xiantao Jiang ◽  
Huiling Lu ◽  
Qian Li ◽  
Hang Zhou ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Indium Tin Oxide ◽  
Optical Switches ◽  
Oxide Semiconductor ◽  
Optical Losses ◽  
Average Output ◽  
Stable Mode ◽  
High Modulation ◽  
Cmos Compatible ◽  
Epsilon Near Zero

AbstractA saturable absorber is a building block for integrated ultrafast photonics and passive optical circuits. However, options currently available suffer from the bottlenecks of the necessity for fine control of the material preparation, large optical losses, and compatibility. This paper presents a complementary metal–oxide–semiconductor (CMOS)-compatible alternative based on an epsilon-near-zero (ENZ) medium, in which the real part of the dielectric constant vanishes. Excellent nonlinear optical modulations, including low linear optical losses, low bleaching threshold, moderate optical amplitude modulation, and high modulation speed of indium tin oxide (ITO) in its ENZ region are achieved. The use of ITO as an intracavity saturable absorber for optical switches of integrated waveguide chip lasers at 1.9 μm has been realized. A stable mode-locked waveguide laser with a repetition rate of 6.4 GHz and an average output power of 28.6 mW is achieved via carefully adjusting the intracavity three-surface interferometer (TSI). This work may pave the way for integrated photonics and electro-optics using a CMOS-compatible ENZ medium.

scholarly journals Indium tin oxide thin film based saturable absorber for Q-switching in C-band region

2019 ◽  
Vol 1371 ◽  
pp. 012018
Author(s):  
N U H H Zalkepali ◽  
N A Awang ◽  
Y R Yuzaile ◽  
Z Zakaria ◽  
A A Latif ◽  
...  
Keyword(s):  
Thin Film ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Band Region ◽  
Q Switching

scholarly journals Q-switched EDF LASER Cavity using ITO as Saturable Absorber

2021 ◽  
Vol 11 ◽  
Author(s):  
Bilal Nizmani ◽  
Faisal Ahmed Memon ◽  
Bhawani Shankar Chowdhary ◽  
Ghulam Fizza ◽  
Suleiman Wadi Harun
Keyword(s):  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Laser Cavity ◽  
Pulse Generation ◽  
Glass Slide ◽  
Center Wavelength ◽  
Erbium Doped ◽  
Electron Beam Deposition ◽  
Beam Deposition

In this work, we have experimentally reported Q-switched pulse generation by indium tin oxide as a saturable absorber. First the glass slide was placed in electron beam deposition chamber and indium tin oxide layer was coated over the glass slide. Then the indium tin oxide was exfoliated from the glass slide, over the fiber ferrules in erbium doped fiber laser cavity. The Q-switched laser operated at center wavelength of 1562.6 nm. The repetition rate and pulse width were obtained to be 48.31-64.52 kHz and 5.65-4.23 µs, respectively.

Time-Resolved Nonlinear Refraction of Indium Tin Oxide at Epsilon Near Zero

2017 ◽  
Author(s):  
Sepehr Benis ◽  
Peng Zhao ◽  
Himansu S. Pattanaik ◽  
David J. Hagan ◽  
Eric W. Van Stryland
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nonlinear Refraction ◽  
Time Resolved ◽  
Epsilon Near Zero

scholarly journals Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 922 ◽  
Author(s):  
Jiqing Lian ◽  
Dawei Zhang ◽  
Ruijin Hong ◽  
Peizhen Qiu ◽  
Taiguo Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plasma Oscillation ◽  
Field Enhancement ◽  
Fdtd Simulation ◽  
Structural Defects ◽  
Defect States ◽  
Vacancy Defects ◽  
Epsilon Near Zero

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

scholarly journals Versatile Mode-Locked Operations in an Er-Doped Fiber Laser with a Film-Type Indium Tin Oxide Saturable Absorber

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 701 ◽  
Author(s):  
Quanxin Guo ◽  
Jie Pan ◽  
Dengwang Li ◽  
Yiming Shen ◽  
Xile Han ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dual Wavelength ◽  
Ito Film ◽  
Film Type ◽  
New Type ◽  
Ultrafast Photonics ◽  
Er Doped

We demonstrate the generation of versatile mode-locked operations in an Er-doped fiber laser with an indium tin oxide (ITO) saturable absorber (SA). As an epsilon-near-zero material, ITO has been only used to fashion a mode-locked fiber laser as an ITO nanoparticle-polyvinyl alcohol SA. However, this type of SA cannot work at high power or ensure that the SA materials can be transmitted by the light. Thus, we covered the end face of a fiber with a uniform ITO film using the radio frequency magnetron sputtering technology to fabricate a novel ITO SA. Using this new type of SA, single-wavelength pulses, dual-wavelength pulses, and triple-wavelength multi-pulses were achieved easily. The pulse durations of these mode-locked operations were 1.67, 6.91, and 1 ns, respectively. At the dual-wavelength mode-locked state, the fiber laser could achieve an output power of 2.91 mW and a pulse energy of 1.48 nJ. This study reveals that such a proposed film-type ITO SA has excellent nonlinear absorption properties, which can promote the application of ITO film for ultrafast photonics.

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