scholarly journals Epsilon-near-zero medium for optical switches in a monolithic waveguide chip at 1.9 μm

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1835-1843 ◽  
Author(s):  
Xiantao Jiang ◽  
Huiling Lu ◽  
Qian Li ◽  
Hang Zhou ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Indium Tin Oxide ◽  
Optical Switches ◽  
Oxide Semiconductor ◽  
Optical Losses ◽  
Average Output ◽  
Stable Mode ◽  
High Modulation ◽  
Cmos Compatible ◽  
Epsilon Near Zero

AbstractA saturable absorber is a building block for integrated ultrafast photonics and passive optical circuits. However, options currently available suffer from the bottlenecks of the necessity for fine control of the material preparation, large optical losses, and compatibility. This paper presents a complementary metal–oxide–semiconductor (CMOS)-compatible alternative based on an epsilon-near-zero (ENZ) medium, in which the real part of the dielectric constant vanishes. Excellent nonlinear optical modulations, including low linear optical losses, low bleaching threshold, moderate optical amplitude modulation, and high modulation speed of indium tin oxide (ITO) in its ENZ region are achieved. The use of ITO as an intracavity saturable absorber for optical switches of integrated waveguide chip lasers at 1.9 μm has been realized. A stable mode-locked waveguide laser with a repetition rate of 6.4 GHz and an average output power of 28.6 mW is achieved via carefully adjusting the intracavity three-surface interferometer (TSI). This work may pave the way for integrated photonics and electro-optics using a CMOS-compatible ENZ medium.

scholarly journals Bright Soliton and Bright–Dark Soliton Pair in an Er-Doped Fiber Laser Mode-Locked Based on In2Se3 Saturable Absorber

2021 ◽  
Vol 9 ◽  
Author(s):  
Qin Wei ◽  
Xile Han ◽  
Huanian Zhang ◽  
Chonghui Li ◽  
Chao Zhang ◽  
...  
Keyword(s):  
Fiber Laser ◽  
Output Power ◽  
Saturable Absorber ◽  
High Power ◽  
Fiber Lasers ◽  
Physical Vapor Deposition ◽  
Modulation Depth ◽  
Polarization State ◽  
Average Output ◽  
Stable Mode

The output power in ultrafast fiber lasers is usually limited due to the lack of a versatile saturable absorber with high damage threshold and large modulation depth. Here we proposed a more efficient strategy to improve the output energy of erbium-doped fiber laser based on indium selenide (In2Se3) prepared by using the physical vapor deposition (PVD) method. Finally, stable mode-locked bright pulses and triple-wavelength dark–bright pulse pair generation were obtained successfully by adjusting the polarization state. The average output power and pulse energy were 172.4 mW/101 nJ and 171.3 mW/100 nJ, which are significantly improved compared with the previous work. These data demonstrate that the PVD-In2Se3 can be a feasible nonlinear photonic material for high-power fiber lasers, which will pave a fresh avenue for the high-power fiber laser.

Epsilon-near-zero indium tin oxide nanocolumns array as a saturable absorber for a Nd:BGO laser

Laser Physics ◽  
2020 ◽  
Vol 30 (5) ◽  
pp. 055802
Author(s):  
Qing-Hua Xiao ◽  
Xiao-Yue Feng ◽  
Wen Yang ◽  
Yun-Kun Lin ◽  
Qian-Qian Peng ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Epsilon Near Zero

scholarly journals Stable Q-Switched Mode-Locking of 2.7 μm Er:Y2O3 Ceramic Laser Using a Semiconductor Saturable Absorber

2018 ◽  
Vol 8 (7) ◽  
pp. 1155 ◽  
Author(s):  
Hao Xue ◽  
Li Wang ◽  
Wei Zhou ◽  
Haotian Wang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Average Output Power ◽  
Doping Concentration ◽  
Modulation Depth ◽  
Mode Locking ◽  
Average Output ◽  
Stable Mode ◽  
High Brightness ◽  
Semiconductor Saturable Absorber ◽  
Ceramic Laser

This paper studies synchronous Q-switch and mode-locking of an 2.7 μm Er:Y2O3 ceramic laser pumped with a high brightness 976 nm fiber laser and using a semiconductor saturable absorber mirror. The Er:Y2O3 ceramic is home-developed with Er3+ doping concentration of 7 at.%. The laser generated ~92 mW of average output power with stable mode-locked pulses of 100% modulation depth and 130 MHz repetition rate embedded inside Q-switched envelopes of ~1.2 μs width. Repetition rates of the Q-switched pulse envelopes are tunable from 5.1 kHz to 29 kHz with the width varying from 2.7 μs to 1.2 μs.

scholarly journals Extremely high-gain source-gated transistors

2019 ◽  
Vol 116 (11) ◽  
pp. 4843-4848 ◽  
Author(s):  
Jiawei Zhang ◽  
Joshua Wilson ◽  
Gregory Auton ◽  
Yiming Wang ◽  
Mingsheng Xu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Critical Factor ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Lengths

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a conventional Si transistor. These same devices demonstrate almost total immunity to negative bias illumination temperature stress, the foremost bottleneck to using oxide semiconductors in major applications, such as display drivers. Furthermore, devices fabricated with channel lengths down to 360 nm display no obvious short-channel effects, another critical factor for high-density integrated circuits and display applications. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance transistor with a semimetal-like indium tin oxide channel, the range and versatility of materials have been significantly broadened.

scholarly journals Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

2019 ◽  
Vol 117 (2) ◽  
pp. 902-906 ◽  
Author(s):  
Mark Hettick ◽  
Hao Li ◽  
Der-Hsien Lien ◽  
Matthew Yeh ◽  
Tzu-Yi Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Indium Tin Oxide ◽  
High Performance ◽  
High Growth ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Lattice Match ◽  
Direct Growth ◽  
Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

scholarly journals Indium tin oxide thin film based saturable absorber for Q-switching in C-band region

2019 ◽  
Vol 1371 ◽  
pp. 012018
Author(s):  
N U H H Zalkepali ◽  
N A Awang ◽  
Y R Yuzaile ◽  
Z Zakaria ◽  
A A Latif ◽  
...  
Keyword(s):  
Thin Film ◽  
Saturable Absorber ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Band Region ◽  
Q Switching

scholarly journals Graphdiyne Saturable Absorber for Passively Q-Switched Ho3+-Doped Laser

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1848
Author(s):  
Cheng Zhang ◽  
Qianqian Hao ◽  
Yuqian Zu ◽  
Mengyu Zong ◽  
Jia Guo ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Pulse Width ◽  
Optical Modulator ◽  
Saturable Absorption ◽  
Carbon Nanostructure ◽  
Absorption Properties ◽  
Promising Candidate ◽  
Average Output ◽  
Short Pulses ◽  
Maximum Average Output Power

High-quality all-carbon nanostructure graphdiyne (GDY) saturable absorber was successfully fabricated and saturable absorption properties in the 2 μm region were characterized using a commercial mode-locked laser as a pulsed source. The fabricated GDY was first used as an optical switcher in a passively Q-switched Ho laser. Under absorbed pump power of 2.4 W, the maximum average output power and shortest pulse width were 443 mW and 1.38 µs, at a repetition rate of 29.72 kHz. The results suggest that GDY nanomaterial is a promising candidate as an optical modulator for generation of short pulses in Ho-doped lasers at 2.1 μm.

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