Multiphoton and plasma absorption measurements in CaF2 and UV fused silica at 473 nm

2021 ◽  
Vol 18 (3) ◽  
pp. 035401
Author(s):  
Ya V Grudtsyn ◽  
A V Koribut ◽  
A A Rogashevskii ◽  
Yu A Gerasimova ◽  
V A Trofimov ◽  
...  
1975 ◽  
Vol 29 (4) ◽  
pp. 337-344 ◽  
Author(s):  
G. E. Walrafen ◽  
J. Stone

The utility of Raman spectroscopy as a means of characterizing the properties of pure and doped fused silica has been investigated. Laser-Raman spectra were obtained by forward scattering from solid optical fibers ∼35 to 85 m in length using 514.5 nm excitation with an “image slicer” and a Cary model 81 instrument. Clad and unclad fibers of fused silica and doped fibers having SiO2-GeO2 and SiO2-GeO2-B2O3 cores were examined. Raman spectra were also obtained from bulk samples of glasses, including pure GeO2, pure B2O3, and various compositions of SiO2-GeO2, SiO2-B2O3, and SiO2-GeO2-B2O3. The addition of dopants to fused silica was found to alter the Raman spectrum both by the appearance of new bands, roughly proportional to dopant concentration and not common either to the fused silica or to the dopant alone, and by the marked alteration of other Raman bands, which is indicative of changes in the local intermolecular order. Thus, addition of GeO2 produces new Raman bands at ∼675 and ∼1000 cm−1; and of B2O3, new bands at ∼940 and ∼1350 cm−1. Addition of GeO2 and/or B2O3 weakens the relatively sharp Raman lines near 485 and 600 cm−1 (and a similar but small effect was also noted with increasing OH content). GeO2 and B2O3 together also produce observable narrowing of the broad intense 440 cm−1 Raman contour. These spectral effects are interpreted, respectively, in terms of a decrease in the concentrations of [Formula: see text] and [Formula: see text] defects produced by dopant addition and of a concomitant reordering of the silica structure. Raman spectroscopy thus appears to be a useful optical technique for elucidating the properties of dopants that have been especially chosen for good optical transmission and hence are not easily detectable by absorption measurements.


2002 ◽  
Vol 73 (7) ◽  
pp. 2578-2582 ◽  
Author(s):  
Brett A. Cruden ◽  
M. V. V. S. Rao ◽  
Surendra P. Sharma ◽  
M. Meyyappan

1974 ◽  
Vol 11 (1) ◽  
pp. 111-129 ◽  
Author(s):  
James R. Stallcop

The formalism for the calculation of the absorption of radiation by a hydrogen plasma at common laboratory conditions is summarized. The hydrogen plasma absorption coefficient for laser radiation has been computed for a wide range of electron densities (1015- 1018 cm-3) and temperatures (10 000–40 000 °K). The results of this computation are presented in a graphical form that permits a determination of the absorption coefficient for the following laser wavelengths: 0.176, 0.325, 0.337, 0.442, 0.488, 0.51, 0.633, 0.694, 1.06, 1.15, 2.36, 3.39, 5.40 and 10.6 Μm. The application of these results and laser radiation absorption measurements to plasma diagnostics is discussed briefly.


2006 ◽  
Vol 957 ◽  
Author(s):  
Wei Wei ◽  
Vikram Bhosle ◽  
Chunming Jin ◽  
Roger J Narayan

ABSTRACTGa-doped Mg0.15Zn0.85O thin films have been grown on fused silica substrates at 350°C with four different gallium concentration values using pulsed laser deposition. X-ray diffraction results indicate that these films were textured with c-plane parallel to the substrate surface. The bandgap of the films were determined based on the absorption measurements. The bandgaps of the Ga-doped thin films shifted to higher energy with respect to that of the unalloyed Mg0.15Zn0.85O thin film due to the band filling effect of electron distribution in the conduction band. Resistivity of the films was measured with four-point probe at temperatures from 295 K to 15 K. The activation energy of the gallium dopants was extracted by fitting the temperature dependent curve of resistivity.


Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.


2006 ◽  
Vol 134 ◽  
pp. 929-934 ◽  
Author(s):  
F. Malaise ◽  
J.-M. Chevalier ◽  
I. Bertron ◽  
F. Malka

2021 ◽  
Author(s):  
Garrett C. Mathews ◽  
Matthew Blaisdell ◽  
Aaron I. Lemcherfi ◽  
Carson D. Slabaugh ◽  
Christopher S. Goldenstein

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