High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

2009 ◽  
Vol 18 (5) ◽  
pp. 1931-1934 ◽  
Author(s):  
Zhang Lin ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming ◽  
Han Chao ◽  
Ma Yong-Ji
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Radiation Effect ◽  
High Energy ◽  
Energy Electron ◽  
Electron Radiation ◽  
Schottky Barrier Diodes ◽  
High Energy Electron

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

2009 ◽  
Vol 18 (8) ◽  
pp. 3490-3494 ◽  
Author(s):  
Zhang Lin ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming ◽  
Han Chao ◽  
Ma Yong-Ji
Keyword(s):  
Ohmic Contact ◽  
Radiation Effect ◽  
High Energy ◽  
Energy Electron ◽  
Electron Radiation ◽  
High Energy Electron

scholarly journals Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes

2016 ◽  
Vol 45 (8) ◽  
pp. 4177-4182 ◽  
Author(s):  
A. T. Paradzah ◽  
E. Omotoso ◽  
M. J. Legodi ◽  
F. D. Auret ◽  
W. E. Meyer ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
High Energy ◽  
Energy Electron ◽  
Schottky Barrier Diodes ◽  
High Energy Electron

Bismuth oxide-based nanocomposite for high-energy electron radiation shielding

2018 ◽  
Vol 54 (4) ◽  
pp. 3023-3034 ◽  
Author(s):  
Siyuan Chen ◽  
Shruti Nambiar ◽  
Zhenhao Li ◽  
Ernest Osei ◽  
Johnson Darko ◽  
...  
Keyword(s):  
Bismuth Oxide ◽  
High Energy ◽  
Radiation Shielding ◽  
Energy Electron ◽  
Electron Radiation ◽  
High Energy Electron

Slow Decay of Reflection High Energy Electron Diffraction Oscillations in Cal1-xMgxF2

1996 ◽  
Vol 441 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Yuriy V. Shusterman ◽  
Nikolai L. Yakovlev ◽  
Leo J. Schowalter
Keyword(s):  
Phase Separation ◽  
Electron Diffraction ◽  
Lattice Constant ◽  
Room Temperature ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Slow Decay

AbstractMagnesium is incorporated into the growth of Ca1-xMgxF2 to reduce the lattice constant of fluorite (CaF2) which is 0.6% larger than that of Si at room temperature. When grown epitaxially on Si(111) substrates at 300°C, the lattice constant of the alloy became smaller than that of Si by 1.5% when the Mg concentration was around 20%. At higher Mg concentrations, the lattice constant did not decrease any further. This invariability of the lattice constant was caused by a phase separation of the Ca1-xMgxF2 layer into a Mg-rich region and a Mg-deficient region. When the growth temperature was increased, the critical Mg concentration for the phase separation became smaller. When Ca1-xMgxF2 was grown on vicinal Si(111) substrates, the reflection high energy electron diffraction (RHEED) intensity oscillations reflected no change in the composition, suggesting segregation of a Mg-rich phase along the steps. Nevertheless, the oscillations in the intensity of the specular spot for Ca1-xMgxF2 lasted longer than those observed for pure CaF2, suggesting a flatter surface for the alloy. Scanning tunneling microscopy (STM) observations support this model.

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