A Strategy to Mitigate Single Event Upset in 14 nm CMOS Bulk FinFET Technology

Abstract 3D TCAD simulations demonstrated that reducing the distance between the well boundary and NMOS or PMOS can mitigate the cross section of Single Event Upset (SEU) in 14 nm CMOS bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restore currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Different from Dual-interlock cells (DICE) design, under the presence of enough taps to ensure the rapid recovery of well potential, this approach is more effective under heavy ion irradiation of higher LET. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.

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The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽

10.3390/electronics10040440 ◽

2021 ◽

Vol 10 (4) ◽

pp. 440

Author(s):

Yanan Liang ◽

Rui Chen ◽

Jianwei Han ◽

Xuan Wang ◽

Qian Chen ◽

...

Keyword(s):

Low Voltage ◽

Ion Irradiation ◽

Heavy Ion ◽

Track Length ◽

Single Event ◽

Single Event Effects ◽

Heavy Ion Irradiation ◽

Enhancement Mode ◽

Gan Hemt ◽

Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

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Single-event testing using heavy ion irradiation through thick layers of material

RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) ◽

10.1109/radecs.2001.1159319 ◽

2005 ◽

Cited By ~ 3

Author(s):

G.M. Swift ◽

D.G. Millward ◽

H.L. Clark

Keyword(s):

Ion Irradiation ◽

Heavy Ion ◽

Single Event ◽

Heavy Ion Irradiation ◽

Thick Layers

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Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

10.1117/12.2180756 ◽

2014 ◽

Author(s):

R. G. Useinov ◽

G. I. Zebrev ◽

V. V. Emelyanov ◽

A. S. Vatuev

Keyword(s):

Ion Irradiation ◽

Heavy Ion ◽

Single Event ◽

Power Mosfets ◽

Heavy Ion Irradiation

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Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices

10.1520/f1192m-95 ◽

1995 ◽

Author(s):

Keyword(s):

Ion Irradiation ◽

Semiconductor Devices ◽

Heavy Ion ◽

Single Event ◽

Heavy Ion Irradiation

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Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.440 ◽

2014 ◽

Vol 778-780 ◽

pp. 440-443 ◽

Cited By ~ 1

Author(s):

Manato Deki ◽

Takahiro Makino ◽

Kazutoshi Kojima ◽

Takuro Tomita ◽

Takeshi Ohshima

Keyword(s):

Dielectric Breakdown ◽

Ion Irradiation ◽

Gate Oxide ◽

Heavy Ion ◽

Single Event ◽

Leakage Currents ◽

Mos Capacitors ◽

Heavy Ion Irradiation ◽

Mos Devices ◽

Thin Gate Oxide

The leakage currents through the gate oxide of MOS capacitors fabricated on n-type 4H-Silicon Carbide (SiC) was measured under accumulation bias conditions with heavy-ion irradiation. The Linear Energy Transfer (LET) dependence of the critical electric field (Ecr) at which dielectric breakdown occurred in these capacitors with two different oxide thicknesses was evaluated. The MOS capacitors with thin gate oxide showed higherEcrvalues than those with thick gate oxide. The linear relationship between the reciprocalEcrandLETwas observed for both MOS capacitors. The slope ofLETdependence of 1/Ecrfor SiC MOS capacitors was smaller than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices.

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