>35% 5-junction space solar cells based on the direct bonding technique

2021 ◽  
Vol 42 (12) ◽  
pp. 122701
Author(s):  
Xinyi Li ◽  
Ge Li ◽  
Hongbo Lu ◽  
Wei Zhang
Keyword(s):  
Solar Cells ◽  
Photovoltaic Devices ◽  
Band Engineering ◽  
Material Tailoring ◽  
Multijunction Solar Cells ◽  
Bonding Technique

Abstract Multijunction solar cells are the highest efficiency photovoltaic devices yet demonstrated for both space and terrestrial applications. In recent years five-junction cells based on the direct semiconductor bonding technique (SBT), demonstrates space efficiencies >35% and presents application potentials. In this paper, the major challenges for fabricating SBT 5J cells and their appropriate strategies involving structure tunning, band engineering and material tailoring are stated, and 4-cm 2 35.4% (AM0, one sun) 5J SBT cells are presented. Further efforts on detailed optical managements are required to improve the current generating and matching in subcells, to achieve efficiencies 36%–37%, or above.

Light-Induced Degradation in Solar Cells with Hydrogenated Amorphous Silicon-Sulfur Active Layers

2002 ◽  
Vol 715 ◽  
Author(s):  
Wei Xu ◽  
P. C. Taylor
Keyword(s):  
Solar Cells ◽  
Practical Importance ◽  
Chemical Vapor ◽  
Photovoltaic Devices ◽  
Sulfur Concentration ◽  
Active Layers ◽  
Conversion Efficiencies ◽  
Hydrogenated Amorphous ◽  
Secondary Ion ◽  
Initial Conversion

AbstractWe have made a series of a-SiSx:H based solar cells, with a pin structure, in a multichamber plasma enhanced chemical vapor deposition (PECVD) system. The sulfur concentration ranges from zero to 5 x 1018 cm-3 as measured by secondary ion mass spectroscopy. The initial conversion efficiencies of cells in this series with sulfur concentrations ≤ 1018 cm-3 are approximately 7%. The time constants for degradation increase with increasing sulfur concentration, but not fast enough to be of practical importance in photovoltaic devices.

scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

Functionalized aluminum-catalyzed silicon nanowire formation and radial junction photovoltaic devices

Nanoscale ◽  
2021 ◽  
Author(s):  
Wipakorn Jevasuwan ◽  
Naoki Fukata
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Surface Defects ◽  
Silicon Nanowire ◽  
Photovoltaic Devices ◽  
Step Process ◽  
One Step ◽  
Length Reduction

Vertical Al-catalyzed SiNW arrays with shaped surfaces were synthesized by a one-step process and NW-based solar cells were demonstrated with optimized NW surface defects through surface modification and length reduction.

scholarly journals Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Molecular Beam ◽  
Optical Excitation ◽  
Material System ◽  
Intermediate Band ◽  
Temperature Characteristics ◽  
Quantum Nanostructures ◽  
Band Engineering ◽  
Intermediate Band Solar Cells ◽  
Carrier Extraction

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array

2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanoparticle Array ◽  
Pd Nanoparticle ◽  
Multijunction Solar Cells
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