Cross section scaling for the ionization of H2O by highly charged ions

This paper reviews the electron-impact excitation (EIE) measurements at electron beam ion trap (EBIT) facilities in the last 20~years. EIE cross sections are important atomic parameters fundamental to understanding the spectroscopic properties of ions. The properties of an EBIT make it an ideal device to measure the EIE cross section of highly charged ions. As a matter of fact, a report of EIE measurement was among the first papers published on the first EBIT ever built, EBIT-I. Since then, a wide range of measurements have been performed for K-shell and L-shell highly charged ions of Ti, V, Cr, Mn, Fe, Xe, and Ba using a combination of crystal spectrometers and solid-state X-ray detectors. In the last few years, the measurements were extended to all strong Fe L-shell lines by using a 6 × 6 pixel array microcalorimeter.PACS Nos.: 32.30.Jc, 32.30.Rj, 34.50.Fa, 32.70.Cs

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Transmission of highly charged ions through mica nanocapillaries of rhombic cross section

Physical Review A ◽

10.1103/physreva.86.022901 ◽

2012 ◽

Vol 86 (2) ◽

Cited By ~ 8

Author(s):

HQ. Zhang ◽

N. Akram ◽

I. L. Soroka ◽

C. Trautmann ◽

R. Schuch

Keyword(s):

Cross Section ◽

Highly Charged Ions ◽

Charged Ions

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Single-electron-capture cross section for medium- and high-velocity, highly charged ions colliding with atoms

Physical Review A ◽

10.1103/physreva.23.597 ◽

1981 ◽

Vol 23 (2) ◽

pp. 597-610 ◽

Cited By ~ 169

Author(s):

H. Knudsen ◽

H. K. Haugen ◽

P. Hvelplund

Keyword(s):

Electron Capture ◽

Cross Section ◽

High Velocity ◽

Capture Cross Section ◽

Highly Charged Ions ◽

Single Electron ◽

Capture Cross ◽

Electron Capture Cross Section ◽

Single Electron Capture ◽

Charged Ions

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Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽

10.3390/coatings11010007 ◽

2020 ◽

Vol 11 (1) ◽

pp. 7

Author(s):

Chin-Chiuan Kuo ◽

Chun-Hui Lin ◽

Jing-Tang Chang ◽

Yu-Tse Lin

Keyword(s):

Growth Rate ◽

Magnetron Sputtering ◽

High Power ◽

Pulse Width ◽

Film Growth ◽

Highly Charged Ions ◽

Argon Pressure ◽

Hexagonal Prism ◽

Film Growth Rate ◽

Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

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