The influence of confined acoustic phonon on the Quantum Ettingshausen effect in cylindrical quantum wire with an infinite potential in presence of strong electromagnetic wave

Based on the quantum kinetic equation (QKE) for electron, we have theoretically studied the theory of photo-stimulated Ettingshausen effect in a one-dimensional cylindrical quantum wire (CQW). The strong electromagnetic wave (EMW) [Formula: see text] plays a role as photo-stimulation source. We obtain the analytic expressions for the kinetic tensors [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text] and the Ettingshausen coefficient (EC) in the CQW with the dependence on the amplitude and the energy of EMW, the CQW radius, the magnetic field and the temperature for two cases: optical phonon and acoustic phonon. The results are numerically evaluated and graphed for GaAs/AlGaAs CQW model. It is shown that we observe the cyclotron resonance and magneto-phonon resonance effect while surveying EC in terms of magnetic field (with and without EMW) and EMW energy, considered the electron-optical phonon scattering. In case of electron-acoustic phonon scattering, the oscillation of EC is obtained with the transition between low Landau levels (LLs). We also clarify the impact of quantum size effect (QSE) on EC by surveying the influence of EC on the radius of CQW.

Download Full-text

Calculation of the Ettingshausen coefficient in a Rectangular quantum wire with an infinite potential in the presence of an Electromagnetic wave (the electron - optical phonon interaction )

VNU Journal of Science Mathematics - Physics ◽

10.25073/2588-1124/vnumap.4236 ◽

2017 ◽

Vol 33 (4) ◽

Author(s):

Trần Hải Hưng

Keyword(s):

Electromagnetic Wave ◽

Optical Phonon ◽

Quantum Wire ◽

Characteristic Parameters ◽

Phonon Interaction ◽

Bulk Semiconductors ◽

Ettingshausen Effect ◽

The Difference ◽

The Magnetic Field ◽

Theoretical Results

The Ettingshausen coefficient (EC) in a Rectangular quantum wire with an infinite potential (RQWIP)in the presence of an Electromagnetic wave (EMW) is calculated by using a quantum kinetic equation for electrons. Considering the case of the electron - optical phonon interaction, we have found the expressions of the kinetic tensors . From the kinetic tensors, we have also obtained the analytical expression of the EC in the RQWIP in the presence of EMW as function of the frequency and the intensity of the EMW, of the temperature of system, of the magnetic field and of the characteristic parameters of RQWIP. The theoretical results for the EC are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAL. We also compared received EC with those for normal bulk semiconductors and quamtum wells to show the difference. The Ettingshausen effect in a RQWIP in the presence of an EMW is newly developed.

Download Full-text

The Photon-Drag Effect in Cylindrical Quantum Wire with an Infinite Potential for the Case of Electrons – Acoustic Phonon Scattering

VNU Journal of Science Mathematics - Physics ◽

10.25073/2588-1124/vnumap.4246 ◽

2017 ◽

Vol 33 (4) ◽

Author(s):

Ngoc Hoang Van ◽

Nhan Vu Nguyen ◽

Vuong Quoc Dinh

Keyword(s):

Electromagnetic Wave ◽

Laser Radiation ◽

Direct Current ◽

Quantum Wire ◽

Acoustic Phonon ◽

Phonon Scattering ◽

Drag Effect ◽

Linearly Polarized ◽

Analytic Expressions ◽

Laser Radiation Field

Abstract - The photon - drag effect with electrons – acoustic phonon scattering in cylindrical quantum wire with an infinite potential is studied. With the appearance of the linearly polarized electromagnetic wave, the laser radiation field and the dc electric field, analytic expressions for the density of the direct current are calculated by the quantum kinetic equation. The dependence of the direct current density on the frequency of the laser radiation field, the frequency of the linearly polarized electromagnetic wave and the temperature of the system is obtained. The analytic expressions are numerically evaluated and plotted for a specific quantum wire, GaAs/AlGaAs. The difference of the density of the direct current in quantum wires from quantum well and bulk semiconductor is due to potential barrier and characteristic parameters of system. These results are for every temperature and are new results.

Download Full-text