scholarly journals The Quantum Calculation for Valence Band Structure of Strained Zinc-blende GaN Using Six-Band Based k·p Method

2021 ◽  
Vol 2065 (1) ◽  
pp. 012002
Author(s):  
Yaqun Liu ◽  
Everett X. Wang ◽  
Gary Zhang ◽  
Xiyue Li
Keyword(s):  
Valence Band ◽  
Quantum Confinement Effect ◽  
Hole Mobility ◽  
Uniaxial Stress ◽  
Carrier Distribution ◽  
Group Iii ◽  
Stress Effects ◽  
Zinc Blende ◽  
Group Iii Nitride ◽  
Strain Dependent

Abstract The variations of valence band energy with stress effects in zinc-blende GaN are proposed in this paper. The calculations are based on a six-band strain dependent k·p Hamiltonian, and can be self-consistently solved by Schrödinger-Poisson equation. Accurate physical pictures are given for the quantized valence subband structure under biaxial and uniaxial stress in (001) surface along the [110] direction accounting the quantum confinement effect. The warping of the energy profile results in carrier distribution change. This research will be beneficial for improving the hole mobility and the selective of optimum stress for group-III nitride semiconductor based devices.

Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors

1995 ◽  
Vol 34 (Part 1, No. 5A) ◽  
pp. 2213-2215
Author(s):  
Sadanojo Nakajima ◽  
Tao Yang ◽  
Shiro Sakai
Keyword(s):  
Valence Band ◽  
Band Edge ◽  
Valence Band Edge ◽  
Group Iii ◽  
Alloy Semiconductors ◽  
Group Iii Nitride

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

2001 ◽  
Vol 63 (16) ◽  
Author(s):  
L. E. Ramos ◽  
L. K. Teles ◽  
L. M. R. Scolfaro ◽  
J. L. P. Castineira ◽  
A. L. Rosa ◽  
...  
Keyword(s):  
Effective Mass ◽  
Group Iii ◽  
Zinc Blende ◽  
Mass Properties ◽  
Nitride Semiconductor ◽  
Semiconductor Compounds ◽  
Group Iii Nitride

Uniaxial Stress Effects On Valence Band Structures Of GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
A. A. Yamaguchi ◽  
Y. Mochizuki ◽  
C. Sasaoka ◽  
A. Kimura ◽  
M. Nido ◽  
...  
Keyword(s):  
Valence Band ◽  
Uniaxial Stress ◽  
Reflectance Spectroscopy ◽  
Experimental Results ◽  
Energy Separation ◽  
Strain Effect ◽  
Deformation Potential ◽  
Stress Effects ◽  
Polarization Characteristics ◽  
Valence Bands

AbstractValence band modification by uniaxial stress in GaN is investigated by reflectance spectroscopy. It is observed that the energy separation between the A and B valence bands increases with the applied uniaxial stress in the c-plane. Changes of the wavefunctions by the stress are also investigated by the polarization characteristics of the reflectance spectra. The experimental results are analyzed on the basis of k•p theory, and deformation potential D5 is experimentally determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.

k ⋅ p calculations of bismuth induced changes in band structure of InN1−xBix, GaN1−xBix and AlN1−xBix alloys

2018 ◽  
Vol 32 (11) ◽  
pp. 1850126 ◽  
Author(s):  
Junyu Zhang ◽  
Pengfei Lu ◽  
Yingjie Chen ◽  
Dan Liang ◽  
Chunfang Zhang ◽  
...  
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Valence Band ◽  
Potential Candidate ◽  
Orbit Splitting ◽  
Group Iii ◽  
Spin Orbit Splitting ◽  
Band Absorption ◽  
Valence Band Anticrossing ◽  
Group Iii Nitride

Valence band anticrossing (VBAC) model is used to investigate band structure of InN[Formula: see text]Bi[Formula: see text], GaN[Formula: see text]Bi[Formula: see text] and AlN[Formula: see text]Bi[Formula: see text] for the purpose of optimal performance group-III nitride related devices. Obvious reduction in band gap and increase in spin–orbit splitting energy are founded by doping dilute concentration of bismuth in all these III-N material. The band gap of GaN[Formula: see text]Bi[Formula: see text] and AlN[Formula: see text]Bi[Formula: see text] show a step change, and this can be explained by the special position relation between of Bi impurity energy level with corresponding host’s band offsets. We also show how bismuth may be used to form alloys by finding the doping region [Formula: see text] which can provide a means of suppressing non-radiative CHSH (hot-hole producing) Auger recombination and inter-valence band absorption. For InN[Formula: see text]Bi[Formula: see text], bismuth concentration beyond 1.25% is found to be corresponding to the range of [Formula: see text] and it shows a continuous adjustable band gap from 0.7 eV to zero. This may make InN[Formula: see text]Bi[Formula: see text] a potential candidate for near or mid-infrared optoelectronic applications.

Quantum resonances in the valence band of zinc-blende semiconductors. II. Results forp-InSb under uniaxial stress

1979 ◽  
Vol 20 (2) ◽  
pp. 701-715 ◽  
Author(s):  
R. Ranvaud ◽  
H. -R. Trebin ◽  
U. Rössler ◽  
Fred H. Pollak
Keyword(s):  
Valence Band ◽  
Uniaxial Stress ◽  
Zinc Blende ◽  
Quantum Resonances

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

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