Conformality of a-Si:H deposited by low temperature PECVD for solar cells application
2021 ◽
Vol 2086
(1)
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pp. 012041
Keyword(s):
Abstract This work is devoted to the study of the deposition of a-Si:H by the PECVD method in continuous and pulsed regime on test structures in the form of trenches with a high aspect ratio. The thicknesses of the layers obtained in these modes were investigated by the method of scanning electron microscopy. It was shown that the layers obtained in the pulsed mode, as compared with the continuous one, have better conformity.
2011 ◽
Vol 04
(04)
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pp. 365-368
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2014 ◽
Vol 633-634
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pp. 550-553
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1989 ◽
Vol 47
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pp. 736-737
1986 ◽
Vol 44
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pp. 902-903
1991 ◽
Vol 161
(1)
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pp. 59-72
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2012 ◽
Vol 198-199
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pp. 99-102